Inchange Semiconductor Product Specification 2SC3752 Silicon NPN Power Transistors DESCRIPTION ・With TO-220F package ・High breakdown voltage and high reliability. ・Fast switching speed. ・Wide ASO(Safe Operating Area) APPLICATIONS ・800V/3A switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1100 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 3 A ICM Collector current-peak 10 A IB Base current 1.5 A PC Collector dissipation 30 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ TC=25℃ Inchange Semiconductor Product Specification 2SC3752 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=5mA ;RBE=∞ 800 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 1100 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=1.5A; IB=0.3A 2.0 V VBEsat Base-emitter saturation voltage IC=1.5A ;IB=0.3A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 μA IEBO Emitter cut-off current VEB=5V; IC=0 10 μA hFE-1 DC current gain IC=0.2A ; VCE=5V 10 hFE-2 DC current gain IC=1A ; VCE=5V 8 Transition frequency IC=0.2A ; VCE=10V 15 MHz Collector output capacitance f=1MHz;VCB=10V 60 pF fT COB CONDITIONS MIN TYP. MAX UNIT 40 Switching times ton Turn-on time tstg Storage time tf IC=2.0A; IB1=0.4A;IB2=-0.8A VCC=400V ,RL=200Ω Fall time hFE-1 Classifications K L M 10-20 15-30 20-40 2 0.5 μs 3.0 μs 0.3 μs Inchange Semiconductor Product Specification 2SC3752 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification 2SC3752 Silicon NPN Power Transistors 4