SavantIC Semiconductor Product Specification 2SC4460 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High breakdown voltage, high reliability. ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 800 V VCEO Collector-emitter voltage Open base 500 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 15 A ICM Collector current-peak 25 A IB Base current 4 A PC Collector power dissipation TC=25 55 W 3 Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC4460 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 800 V V(BR)CEO Collector-emitter breakdown voltage IC=5mA; RBE=< 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7 V VCEX(SUS) Collector-emitter sustaining voltage IC=5A;IB1=2A; IB2=-2A;L=500µH 500 V VCEsat Collector-emitter saturation voltage IC=6A;IB=1.2 A 1.0 V VBEsat Base-emitter saturation voltage IC=6A;IB=1.2A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE-1 DC current gain IC=1.2A ; VCE=5V 15 hFE-2 DC current gain IC=6A ; VCE=5V 8 fT Transition frequency IC=1.2A ; VCE=10V 18 MHz COB Output capacitance VCB=10V;f=1MHz 160 pF 50 Switching times ton Turn-on time tstg Storage time tf IC=5IB1=-2.5IB2=7A; RL=28.6D VCC=200V Fall time hFE-1 classifications L M N 15-30 20-40 30-50 2 0.5 µs 3.0 µs 0.3 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC4460 SavantIC Semiconductor Product Specification 2SC4460 Silicon NPN Power Transistors 4