SavantIC Semiconductor Product Specification 2SC3040 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·High breakdown voltage (VCBO 500V) ·Fast switching speed ·Wide ASO Safe Operating Area APPLICATIONS ·400V/8A switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 500 V VCEO Collector-emitter voltage Open base 400 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 8 A ICM Collector current-peak 16 A IB Base current 3 A PC Collector power dissipation Ta=25 2.5 TC=25 80 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC3040 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE== 400 V V(BR)CBO Collector-base breakdown voltage IC=1mA ;IE=0 500 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 7 V VCEsat Collector-emitter saturation voltage IC=4A ;IB=0.8A 1.0 V VBEsat Base-emitter saturation voltage IC=4A ;IB=0.8A 1.5 V ICBO Collector cut-off current VCB=400V ;IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE-1 DC current gain IC=0.8A ; VCE=5V 15 hFE -2 DC current gain IC=4A ; VCE=5V 8 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 80 pF fT Transition frequency IC=0.8A ; VCE=10V 20 MHz 50 Switching times ton Turn-on time ts Storage time tf Fall time IC=5A IB1=-IB2=1A RL=40D,VCC=200V hFE-1 classifications L M N 15-30 20-40 30-50 2 1.0 µs 2.5 µs 1.0 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SC3040 SavantIC Semiconductor Product Specification 2SC3040 Silicon NPN Power Transistors 4