SavantIC Semiconductor Product Specification 2SC4427 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High breakdown voltage, high reliability. ·Fast switching speed. ·Wide area of safe operation APPLICATIONS ·For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1100 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V 4.5 A 15 A 2 A IC Collector current ICM Collector current-peak IB Base current PC Collector power dissipation PW 300µs, duty cycle 10% TC=25 50 Ta=25 3 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC4427 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CBO Collector-base breakdown voltage IC=1mA; IE=0 1100 V V(BR)CEO Collector-emitter breakdown voltage IC=5mA; RBE== 800 V V(BR)EBO Emitter-base breakdown voltage IE=1mA; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2A;IB=0.4A 2.0 V VBEsat Base-emitter saturation voltage IC=2A;IB=0.4A 1.5 V ICBO Collector cut-off current VCB=800V; IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE-1 DC current gain IC=0.3A ; VCE=5V 10 hFE-2 DC current gain IC=1.5A ; VCE=5V 8 fT Transition frequency IC=0.3A ; VCE=10V 15 MHz COB Output capacitance VCB=10V;f=1MHz 90 pF 40 Switching times ton tstg tf Turn-on time IC=3A;RL=133C IB1=0.6A; IB2=-1.2A VCC=400V Storage time Fall time hFE-1 classifications K L M 10-20 15-30 20-40 2 0.5 µs 3.0 µs 0.3 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC4427 SavantIC Semiconductor Product Specification 2SC4427 Silicon NPN Power Transistors 4