IGBT FMC6G30US60 Compact & Complex Module General Description Fairchild IGBT Power Module provides low conduction and switching losses as well as short circuit ruggedness. It’s designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is required. Features • • • • • • Short Circuit rated 10us @ TC = 100°C, VGE = 15V High Speed Switching Low Saturation Voltage : VCE(sat) = 2.2 V @ IC = 30A High Input Impedance Built in 3 Phase Rectifier Circuit Fast & Soft Anti-Parallel FWD Package Code : 21PM-BB P P1 Application • • • • GU AC & DC Motor Controls General Purpose Inverters Robotics Servo Controls GV GW R EU EV EW S U W V T GU N GV GW B E Internal Circuit Diagram Absolute Maximum Ratings Inverter Converter Symbol VCES VGES IC ICM (1) IF IFM PD TSC VRRM IO IFSM 2 Common TC = 25°C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC = 25°C Pulsed Collector Current Diode Continuous Forward Current @ TC = 100°C Diode Maximum Forward Current Maximum Power Dissipation @ TC = 25°C Short Circuit Withstand Time @ TC = 100°C Repetitive Peak Reverse Voltage Average Output Rectified Current Surge Forward Current @ 1Cycle at 60Hz, Peak value Non-Repetitive 1 Cycle Surge Current FMC7G30US60 600 ± 20 30 60 30 60 125 10 1200 30 Units V V A A A A W us V A 300 A 369 A2s I t TJ Operating Junction Temperature -40 to +150 °C TSTG Storage Temperature Range -40 to +125 °C VISO Isolation Voltage Mounting part Screw 2500 1.25 V N.m Mounting Torque @ AC 1minute @ M4 Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature ©2000 Fairchild Semiconductor International FMC6G30US60 Rev. A FMC6G30US60 September 2000 Symbol Parameter TC = 25°C unless otherwise noted Test Conditions Min. Typ. Max. Units 600 -- -- V VGE = 0V, IC = 1mA -- 0.6 -- V/°C VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 250 ± 100 uA nA IC = 30mA, VCE = VGE IC = 30A, VGE = 15V 5.0 -- 6.0 2.2 8.5 2.8 V V ---- 1970 310 74 ---- pF pF pF --------------- 30 65 54 138 0.92 0.82 1.74 34 67 60 281 0.93 1.56 2.49 --80 200 --2..4 --90 400 --3.4 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ VCC = 300 V, VGE = 15V 100°C 10 -- -- us VCE = 300 V, IC = 30A, VGE = 15V ---- 85 17 39 120 25 55 nC nC nC Off Characteristics BVCES ∆BVCES/ ∆TJ ICES IGES Collector-Emitter Breakdown Voltage Temperature Coeff. of Breakdown Voltage Collector Cut-Off Current G-E Leakage Current VGE = 0V, IC = 250uA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Tsc Short Circuit Withstand Time Qg Qge Qgc Total Gate Charge Gate-Emitter Charge Gate-Collector Charge ©2000 Fairchild Semiconductor International VCC = 300 V, IC = 30A, RG = 7Ω, VGE = 15V, Inductive Load, TC = 25°C VCC = 300 V, IC = 30A, RG = 7Ω, VGE = 15V, Inductive Load, TC = 125°C @ TC = FMC6G30US60 Rev. A FMC6G30US60 Electrical Characteristics of IGBT @ Inverter Symbol Parameter TC = 25°C unless otherwise noted Test Conditions TC = 25°C IF = 30A TC = 100°C VFM Diode Forward Voltage trr Diode Reverse Recovery Time Irr Diode Peak Reverse Recovery Current Qrr Diode Reverse Recovery Charge IF = 30A di / dt = 60 A/us VFM Diode Forward Voltage IRRM Repetitive Reverse Current -- 2.0 -- -- 90 180 -- 130 -- TC = 25°C -- 2.2 3.4 TC = 100°C -- 3.4 -- TC = 25°C -- 400 600 TC = 100°C -- 880 -- Units V ns A nC = 25°C unless otherwise noted Test Conditions TC = 25°C IF = 30A TC = 100°C VR = VRRM Max. 2.8 TC = 100°C C Parameter Typ. 2.0 TC = 25°C Electrical Characteristics of DIODE @ Converter T Symbol Min. -- Min. -- Typ. 1.1 Max. 1.5 -- 1.0 -- TC = 25°C -- -- 8 TC = 100°C -- 5 -- Units V mA Thermal Characteristics Inverter Brake Converter Weight Symbol RθJC RθJC RθJC RθJC RθJC ©2000 Fairchild Semiconductor International Junction-to-Case Junction-to-Case Junction-to-Case Junction-to-Case Junction-to-Case Weight of Module Parameter (IGBT Part, per 1/6 Module) (DIODE Part, per 1/6 Module) (IGBT Part) (DIODE Part) (DIODE Part, per 1/6 Module) Typ. -----270 Max. 1.0 2.2 1.0 2.2 2.0 -- Units °C/W °C/W °C/W °C/W °C/W g FMC6G30US60 Rev. A FMC6G30US60 Electrical Characteristics of DIODE @ Inverter 20V 15V 70 Collector Current, IC [A] Common Emitter VGE = 15V T C = 25℃ ━━ T C = 125℃ ------ 80 Collector Current, IC [A] Common Emitter TC = 25℃ 80 60 12V 50 40 30 VGE = 10V 70 60 50 40 30 20 20 10 10 0 0 0 2 4 6 8 1 Collector - Emitter Voltage, VCE [V] 10 Collector - Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics 5 40 Common Emitter V GE = 15V VCC = 300V Load Current : peak of square wave 35 60A 4 30 45A 3 30A 2 IC = 15A Load Current [A] Collector - Emitter Voltage, V CE [V] FMC6G30US60 90 90 25 20 15 10 1 Duty cycle : 50% TC = 100℃ Power Dissipation = 45W 5 0 0 -50 0 50 100 0.1 150 1 10 Fig 3. Saturation Voltage vs. Case Temperature at Variant Current Level 1000 Fig 4. Load Current vs. Frequency 20 20 Common Emitter T C = 25℃ Common Emitter T C = 125℃ Collector - Emitter Voltage, VCE [V] Collector - Emitter Voltage, VCE [V] 100 Frequency [KHz] Case Temperature, T C [℃] 16 12 8 4 30A 60A IC = 15A 16 12 8 60A 4 30A IC = 15A 0 0 4 8 12 16 Gate - Emitter Voltage, V GE [V] Fig 5. Saturation Voltage vs. VGE ©2000 Fairchild Semiconductor International 20 4 8 12 16 20 Gate - Emitter Voltage, VGE [V] Fig 6. Saturation Voltage vs. VGE FMC6G30US60 Rev. A Common Emitter VGE = 0V, f = 1MHz TC = 25℃ 3000 Common Emitter VCC = 300V, VGE = ± 15V IC = 30A T C = 25℃ ━━ T C = 125℃ ------ Cies 2500 Switching Time [ns] Capacitance [pF] FMC6G30US60 1000 3500 2000 Coes 1500 1000 Ton Tr 100 Cres 500 10 0 1 1 10 10 Fig 8. Turn-On Characteristics vs. Gate Resistance Fig 7. Capacitance Characteristics 10000 Common Emitter V CC = 300V, V GE = ± 15V IC = 30A T C = 25℃ ━━ T C = 125℃ ------ Common Emitter V CC = 300V, VGE = ± 15V IC = 30A T C = 25℃ ━━ T C = 125℃ ------ Switching Loss [uJ] Switching Time [ns] 1000 100 Gate Resistance, RG [Ω ] Collector - Emitter Voltage, V CE [V] Toff Toff Tf Eon Eoff 1000 Eoff Tf 100 100 1 10 1 100 10 Gate Resistance, R G [Ω ] Fig 9. Turn-Off Characteristics vs. Gate Resistance Fig 10. Switching Loss vs. Gate Resistance 1000 1000 Common Emitter V GE = ± 15V, RG = 7Ω T C = 25℃ ━━ T C = 125℃ ------ Switching Time [ns] Common Emitter V GE = ± 15V, RG = 7 Ω T C = 25℃ ━━ T C = 125℃ ------ Switching Time [ns] 100 Gate Resistance, R G [ Ω ] Ton Tr 100 Toff Tf Toff 100 Tf 10 15 30 45 Collector Current, IC [A] Fig 11. Turn-On Characteristics vs. Collector Current ©2000 Fairchild Semiconductor International 60 15 30 45 60 Collector Current, IC [A] Fig 12. Turn-Off Characteristics vs. Collector Current FMC6G30US60 Rev. A 15 Eoff Eon Eoff 1000 Common Emitter RL = 10 Ω TC = 25℃ 12 Gate - Emitter Voltage, VGE [ V ] Common Emitter VGE = ± 15V, RG = 7 Ω TC = 25℃ ━━ TC = 125℃ ------ Switching Loss [uJ] FMC6G30US60 10000 300 V V CC = 100 V 200 V 9 6 3 100 0 15 30 45 60 0 20 Collector Current, IC [A] 40 60 80 100 Gate Charge, Qg [ nC ] Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics 200 100 IC MAX. (Pulsed) 100 Collector Current, IC [A] Collector Current, IC [A] 50us IC MAX. (Continuous) 100us 1㎳ 10 DC Operation Single Nonrepetitive Pulse T C = 25℃ Curves must be derated linearly with increase in temperature 1 Safe Operating Area V GE = 20V, T C = 100℃ 0.1 0.3 1 10 10 100 1 1000 1 10 100 1000 Collector-Emitter Voltage, V CE [V] Collector-Emitter Voltage, VCE [V] Fig 15. SOA Characteristics Fig 16. Turn-Off SOA Characteristics 100 Thermal Response, Zthjc [℃/W] Collector Current, I C [A] 5 10 1 0.1 Single Nonrepetitive Pulse TJ ≤ 125℃ VGE = 15V RG = 7 Ω 0 100 200 0.1 0.01 300 400 500 Collector-Emitter Voltage, VCE [V] Fig 17. RBSOA Characteristics ©2000 Fairchild Semiconductor International 1 600 700 IGBT : DIODE : 0.005 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 Rectangular Pulse Duration [sec] Fig 18. Transient Thermal Impedance FMC6G30US60 Rev. A Forward Current, I F [A] 70 Peak Reverse Recovery Current, Irr [A] Reverse Recovery Time, Trr [x10ns] Common Cathode V GE = 0V T C = 25℃ T C = 125℃ 80 60 50 40 30 20 10 0 0 1 2 Forward Voltage, V F [V] Fig 19. Forward Characteristics ©2000 Fairchild Semiconductor International 3 4 T rr 10 Irr Common Cathode di/dt = 60A/us TC = 25℃ TC = 100℃ 1 0.5 5 10 15 20 25 30 Forward Current, IF [A] Fig 20. Reverse Recovery Characteristics FMC6G30US60 Rev. A FMC6G30US60 20 90 FMC6G30US60 Package Dimension 21PM-BB (FS PKG CODE BK) 8.0 15.0 15.0 17.2 48.26(2.54*19) 10-4.0*0.6t P1 N 38.0 58.0 60.0 P GU EU 11-0.7*0.6t 3*10.16 2.5 GV EV GW EW GB -GV E -GU -GW 2-∅4.5 Mounting Hole NAME PLATE S R 5.0 8.0 12.5 T 12.5 B 15.0 U 15.0 V 12.5 W 12.5 17.0 14.1 6.0 21.0 12.0 115.0 Dimensions in Millimeters ©2000 Fairchild Semiconductor International FMC6G30US60 Rev. A TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOS™ EnSigna™ FACT™ FACT Quiet Series™ FAST® FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ POP™ PowerTrench® QFET™ QS™ QT Optoelectronics™ Quiet Series™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. ©2000 Fairchild Semiconductor International Rev. F1