isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD232 DESCRIPTION ·Good Linearity of hFE ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 300V(Min) APPLICATIONS ·Designed for use in power output stages and line driver in TV receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector-Emitter Voltage 500 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 0.5 A IB Base Current-Continuous 0.25 A PC Collector Power Dissipation @TC=25℃ 20 W TJ Junction Temperature 150 ℃ -55~150 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case isc Website：www.iscsemi.cn MAX UNIT 6.25 ℃/W isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BD232 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 150mA; IB= 15mA 1.0 V ICES Collector Cutoff Current VCE= 500V; VBE= 0 100 μA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 μA hFE-1 DC Current Cain IC= 50mA ; VCE= 5V 25 hFE-2 DC Current Cain IC= 150mA ; VCE= 5V 20 isc Website：www.iscsemi.cn CONDITIONS 2 MIN TYP. MAX 300 UNIT V 150