Inchange Semiconductor Product Specification BD434/436/438 Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type BD433/435/437 APPLICATIONS ・For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER CONDITIONS BD434 VCBO VCEO Collector-base voltage Collector-emitter voltage BD436 Open emitter Emitter -base voltage IC -32 BD438 -45 BD434 -22 BD436 UNIT -22 Open base BD438 VEBO VALUE -32 V V -45 Open collector -5 V Collector current (DC) -4 A ICM Collector current-Peak -7 A IB Base current -1 A PC Collector power dissipation 36 W Tj Junction temperature 150 ℃ Tstg Storage temperature -65~150 ℃ TC=25℃ Inchange Semiconductor Product Specification BD434/436/438 Silicon PNP Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat PARAMETER Collector-emitter saturation voltage CONDITIONS MIN BD434/436 -0.2 BD438 Base-emitter on voltage -1.1 V -1.2 BD436 -22 IC=-0.1A; IB=0 ICES Collector cut-off current Collector cut-off current IEBO Emitter cut-off current hFE-1 DC current gain BD434 VCB=-22V; IE=0 BD436 VCB=-32V; IE=0 BD438 VCB=-45V; IE=0 BD434 VCE=-22V; VBE=0 BD436 VCE=-32V; VBE=0 BD438 VCE=-45V; VBE=0 VEB=-5V; IC=0 BD434/436 DC current gain hFE-3 DC current gain IC=-0.5A ; VCE=-1V -100 μA -1 mA 130 85 140 50 IC=-2A ; VCE=-1V BD438 Transition frequency μA 30 BD434/436 fT -100 40 IC=-10mA ; VCE=-5V BD438 hFE-2 V -32 -45 BD438 ICES V IC=-2A ; VCE=-1V BD434 Collector-emitter sustaining voltage UNIT -0.6 BD438 VCEO(SUS) MAX -0.5 IC=-2A; IB=-0.2A BD434/436 VBE TYP. 40 IC=-250mA; VCE=-1V 2 3 MHz Inchange Semiconductor Product Specification BD434/436/438 Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3