SAVANTIC BD175

SavantIC Semiconductor
Product Specification
BD175 BD177 BD179
Silicon NPN Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type BD176/178 /180
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
BD175
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
BD177
Open emitter
Emitter -base voltage
IC
60
BD179
80
BD175
45
BD177
UNIT
45
Open base
BD179
VEBO
VALUE
60
V
V
80
Open collector
5
V
Collector current (DC)
3
A
ICM
Collector current-Peak
7
A
PC
Collector power dissipation
30
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
SavantIC Semiconductor
Product Specification
BD175 BD177 BD179
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEsat
Collector-emitter saturation voltage
Base-emitter on voltage
VBE
CONDITIONS
MAX
UNIT
IC=1A; IB=0.1A
0.8
V
IC=1A ; VCE=2V
1.3
V
BD175
VCEO(SUS)
Collector-emitter
sustaining voltage
BD177
Collector cut-off current
IC=0.1A; IB=0
80
BD175
VCB=45V; IE=0
BD177
VCB=60V; IE=0
BD179
VCB=80V; IE=0
Emitter cut-off current
VEB=5V; IC=0
hFE-1
DC current gain
IC=150mA ; VCE=2V
40
hFE-2
DC current gain
IC=1A ; VCE=2V
15
Transition frequency
IC=250mA; VCE=10V
3
hFE-1 Classifications
6
10
16
40-100
63-160
100-250
V
60
IEBO
fT
TYP.
45
BD179
ICBO
MIN
classification 16 :only BD175
2
100
µA
1
mA
250
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
BD175 BD177 BD179