SAVANTIC BD438

SavantIC Semiconductor
Product Specification
BD434/436/438
Silicon PNP Power Transistors
DESCRIPTION
·With TO-126 package
·Complement to type BD433/435/437
APPLICATIONS
·For medium power linear and
switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
BD434
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
BD436
Open emitter
Emitter -base voltage
IC
-32
BD438
-45
BD434
-22
BD436
UNIT
-22
Open base
BD438
VEBO
VALUE
-32
V
V
-45
Open collector
-5
V
Collector current (DC)
-4
A
ICM
Collector current-Peak
-7
A
IB
Base current
-1
A
PC
Collector power dissipation
36
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
SavantIC Semiconductor
Product Specification
BD434/436/438
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEsat
PARAMETER
Collector-emitter
saturation voltage
CONDITIONS
MIN
BD434/436
-0.2
-1.1
V
-1.2
BD434
Collector-emitter
sustaining voltage
BD436
-22
IC=-0.1A; IB=0
BD438
ICES
ICES
Collector cut-off current
Collector cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
BD434
VCB=-22V; IE=0
BD436
VCB=-32V; IE=0
BD438
VCB=-45V; IE=0
BD434
VCE=-22V; VBE=0
BD436
VCE=-32V; VBE=0
BD438
VCE=-45V; VBE=0
VEB=-5V; IC=0
hFE-3
DC current gain
IC=-0.5A ; VCE=-1V
-100
µA
-1
mA
130
85
140
50
IC=-2A ; VCE=-1V
BD438
Transition frequency
µA
30
BD434/436
fT
-100
40
IC=-10mA ; VCE=-5V
BD438
DC current gain
V
-32
-45
BD434/436
hFE-2
V
IC=-2A ; VCE=-1V
BD438
VCEO(SUS)
UNIT
-0.6
BD438
Base-emitter on voltage
MAX
-0.5
IC=-2A; IB=-0.2A
BD434/436
VBE
TYP.
40
IC=-250mA; VCE=-1V
2
3
MHz
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
BD434/436/438