ISC BU931

isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BU931
DESCRIPTION
·High Voltage
·DARLINGTON
APPLICATIONS
·High ruggedness electronic ignitions
·High voltage ignition coil driver
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
15
A
ICM
Collector Current-peak
30
A
IB
Base Current
1
A
IBM
Base Current-peak
5
A
PC
Collector Power Dissipation
@TC=25℃
175
W
Tj
Junction Temperature
200
℃
-65~200
℃
B
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance, Junction to Case
1.0
℃/W
isc Website:www.iscsemi.cn
isc Product Specification
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
BU931
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-Emitter Sustaining Voltage
IC= 0.1A; IB= 0;L= 10mH
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 7A; IB= 70mA
1.6
V
V CE(sat)-2
Collector-Emitter Saturation Voltage
IC= 8 A; IB= 100mA
1.8
V
V CE(sat)-3
Collector-Emitter Saturation Voltage
IC= 10 A; IB= 250mA
1.8
V
VBE(sat)-1
Base-Emitter Saturation Voltage
IC= 7A; IB= 70mA
2.2
V
V BE(sat)-2
Base-Emitter Saturation Voltage
IC= 8 A; IB= 100mA
2.4
V
V BE(sat)-3
Base-Emitter Saturation Voltage
IC= 10A; IB= 250mA
2.5
V
ICES
Collector Cutoff Current
VCE= 500V;VBE= 0
VCE= 500V;VBE= 0;Tj= 125℃
0.1
0.5
mA
ICEO
Collector Cutoff Current
VCE= 450V;IB= 0
VCE= 450V;IB= 0;Tj= 125℃
0.1
0.5
mA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
20
mA
hFE
DC Current Gain
IC= 5A ; VCE= 10V
VECF
C-E Diode Forward Voltage
IF= 10A
2.5
V
isc Website:www.iscsemi.cn
CONDITIONS
MIN
TYP.
MAX
400
B
B
B
UNIT
V
300
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Website:www.iscsemi.cn
isc Product Specification
BU931