IXFA10N60P IXFP10N60P PolarTM HiPerFETTM Power MOSFET VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier = 600V = 10A Ω ≤ 740mΩ ≤ 200ns TO-263 AA (IXFA) G S Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 600 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 10 A IDM TC = 25°C, Pulse Width Limited by TJM 25 A IA TC = 25°C 10 A EAS TC = 25°C 500 mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns PD TC = 25°C 200 W D (Tab) TO-220AB (IXFP) G G = Gate S = Source -55 ... +150 °C TJM 150 °C Features Tstg -55 ... +150 °C z 300 260 °C °C z 1.13 / 10 Nm/lb.in. 2.5 3.0 g g TJ TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 Seconds Md Mounting Torque (TO-220) Weight TO-263 TO-220 z z z z z z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250μA 600 VGS(th) VDS = VGS, ID = 1mA 3.0 IGSS VGS = ± 30V, VDS = 0V IDSS TJ = 125°C RDS(on) V V ±100 nA VDS = VDSS, VGS = 0V VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 D = Drain Tab = Drain International Standard Packages Dynamic dv/dt Rating Avalanche Rated Fast Intrinsic Rectifier Low QG Low RDS(on) Low Drain-to-Tab Capacitance Low Package Inductance 25 μA 500 μA 740 mΩ Easy to Mount Space Savings Applications z z z z z z © 2010 IXYS CORPORATION, All Rights Reserved D (Tab) Advantages z z 5.5 DS DC-DC Converters Battery Chargers Switch-Mode and Resonant-Mode Power Supplies Uninterrupted Power Supplies AC Motor Drives High Speed Power Switching Applications DS99424F(04/10) IXFA10N60P IXFP10N60P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 6 VDS = 10V, ID = 0.5 • ID25, Note 1 TO-263 Outline 11 S 1720 pF 160 pF 14 pF 23 ns 27 ns 65 ns tf 21 ns Qg(on) 32 nC 12 nC 10 nC Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz Crss td(on) tr td(off) Qgs Resistive Switching Times VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 10Ω (External) VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd 0.62 °C/W RthJC RthCH TO-220 °C/W 0.50 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 10 A ISM Repetitive, Pulse Width Limited by TJM 30 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 0.5 • ID25, VGS = 0V 200 ns IRM QRM 120 -di/dt = 100A/μs VR = 100V 3 A 320 nC TO-220 Outline Notes: 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. 2. On through-hole packages, RDS(on) Kelvin test contact location must be 5mm or less from the package body. Pins: 1 - Gate 3 - Source 2 - Drain IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFA10N60P IXFP10N60P Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 24 10 VGS = 10V VGS = 10V 7V 9 20 8 7V 6V ID - Amperes ID - Amperes 7 6 5 4 6V 12 8 3 2 4 5V 5V 1 0 0 0 1 2 3 4 5 6 7 0 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 3. Output Characteristics @ T J = 125ºC Fig. 4. RDS(on) Normalized to ID = 5A Value vs. Junction Temperature 10 2.6 VGS = 10V 9 2.4 VGS = 10V 2.2 R DS(on) - Normalized 8 6V 7 ID - Amperes 16 6 5 4 5V 3 2.0 I D = 10A 1.8 I D = 5A 1.6 1.4 1.2 1.0 2 0.8 1 0.6 0.4 0 0 1 2 3 4 5 6 7 8 9 10 11 12 -50 13 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 5A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 12 3.0 VGS = 10V 10 TJ = 125ºC 2.2 ID - Amperes R DS(on) - Normalized 2.6 1.8 1.4 8 6 4 TJ = 25ºC 1.0 2 0.6 0 0 5 10 15 ID - Amperes © 2010 IXYS CORPORATION, All Rights Reserved 20 25 -50 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFA10N60P IXFP10N60P Fig. 8. Transconductance Fig. 7. Input Admittance 22 16 TJ = - 40ºC 20 14 18 16 g f s - Siemens ID - Amperes 12 TJ = 125ºC 25ºC - 40ºC 10 8 6 25ºC 14 125ºC 12 10 8 6 4 4 2 2 0 0 3.2 3.6 4.0 4.4 4.8 5.2 5.6 6.0 6.4 0 2 4 6 VGS - Volts 8 10 12 14 16 ID - Amperes Fig. 10. Gate Charge Fig. 9. Forward Voltage Drop of Intrinsic Diode 30 10 9 25 VDS = 300V I D = 5A 8 VGS - Volts IS - Amperes I G = 10mA 7 20 15 6 5 4 TJ = 125ºC 10 3 TJ = 25ºC 2 5 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 5 10 15 VSD - Volts 20 25 30 35 QG - NanoCoulombs Fig. 12. Maximum Transient Thermal Impedance Fig. 11. Capacitance 1 10,000 1,000 Ciss Z(th)JC - ºC / W Capacitance - PicoFarads f = 1 MHz 100 Coss 0.1 10 Crss 1 0 5 10 15 20 25 30 35 40 VDS - Volts 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: IXF_10N60P (4J)4-18-10-D