Advance Technical Information IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3 Polar3TM HiperFETTM Power MOSFETs VDSS ID25 = 600V = 22A Ω ≤ 360mΩ RDS(on) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-220AB (IXFP) G DS Tab TO-3P (IXFQ) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ 600 V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 TC = 25°C 22 A IDM TC = 25°C, Pulse Width Limited by TJM 55 A IA TC = 25°C 11 A EAS TC = 25°C 400 mJ dv/dt IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 35 V/ns PD TC = 25°C 500 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 260 °C °C 1.13 / 10 Nm/lb.in. 3.0 5.5 6.0 g g g TJ TL Tsold 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Md Mounting Torque Weight TO-220 TO-3P TO-247 G D S Tab TO-247 (IXFH) G D S G = Gate S = Source Tab D = Drain Tab = Drain Features z z z z Fast Intrinsic Rectifier Avalanche Rated Low RDS(ON) and QG Low Package Inductance Advantages Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 1mA 600 VGS(th) VDS = VGS, ID = 1.5mA 3.0 IGSS VGS = ±30V, VDS = 0V IDSS VDS = VDSS, VGS= 0V RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 TJ = 125°C z z V 5.0 V ±100 nA 25 μA 1.25 mA 360 mΩ z Applications z z z z z © 2011 IXYS CORPORATION, All Rights Reserved High Power Density Easy to Mount Space Savings Switch-Mode and Resonant-Mode Power Supplies DC-DC Converters Laser Drivers AC and DC Motor Drives Robotics and Servo Controls DS100321(03/11) IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3 Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 • ID25, Note 1 14 Ciss Coss 24 S 2600 pF 265 pF 3.4 pF 1.3 Ω 28 ns VGS = 0V, VDS = 25V, f = 1MHz Crss RGi Gate Input Resistance td(on) Resistive Switching Times tr td(off) tf 17 ns 54 ns 19 ns 38 nC 10 nC 11 nC 0.50 0.25 0.25 °C/W °C/W °C/W VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 RG = 1Ω (External) Qg(on) Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCS TO-3P Outline TO-220 TO-247 & TO-3P Source-Drain Diode Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) Characteristic Values Min. Typ. Max. IS VGS = 0V 22 A ISM Repetitive, Pulse Width Limited by TJM 88 A VSD IF = IS, VGS = 0V, Note 1 1.4 V 250 ns trr IRM QRM Note IF = 11A, -di/dt = 100A/μs VR = 100V, VGS = 0V 8.0 A 0.8 μC TO-247 Outline 1 2 ∅P 3 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%. TO-220 Outline e Terminals: 1 - Gate 3 - Source Dim. Pins: 1 - Gate 2 - Drain 3 - Source ADVANCE TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from a subjective evaluation of the design, based upon prior knowledge and experience, and constitute a "considered reflection" of the anticipated result. IXYS reserves the right to change limits, test conditions, and dimensions without notice. Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC 2 - Drain Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3 Fig. 1. Output Characteristics @ T J = 25ºC Fig. 2. Extended Output Characteristics @ T J = 25ºC 22 45 VGS = 10V 7V 20 40 VGS = 10V 18 35 7V 6V 14 30 ID - Amperes ID - Amperes 16 12 10 8 25 20 6V 15 6 10 4 5 5V 2 5V 0 0 0 1 2 3 4 5 6 7 8 0 9 5 10 15 20 25 30 VDS - Volts VDS - Volts Fig. 4. RDS(on) Normalized to ID = 11A Value vs. Junction Temperature Fig. 3. Output Characteristics @ T J = 125ºC 22 3.4 VGS = 10V 7V 20 VGS = 10V 3.0 18 6V R DS(on) - Normalized ID - Amperes 16 14 12 10 8 5V 6 2.6 2.2 I D = 22A 1.8 I D = 11A 1.4 1.0 4 0.6 2 4V 0 0.2 0 2 4 6 8 10 12 14 16 18 20 22 -50 -25 0 VDS - Volts 25 50 75 100 125 150 125 150 TJ - Degrees Centigrade Fig. 5. RDS(on) Normalized to ID = 11A Value vs. Drain Current Fig. 6. Maximum Drain Current vs. Case Temperature 3.4 24 VGS = 10V 3.0 20 2.6 ID - Amperes R DS(on) - Normalized TJ = 125ºC 2.2 1.8 TJ = 25ºC 16 12 8 1.4 4 1.0 0 0.6 -50 0 5 10 15 20 25 30 ID - Amperes © 2011 IXYS CORPORATION, All Rights Reserved 35 40 45 -25 0 25 50 75 TC - Degrees Centigrade 100 IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3 Fig. 7. Input Admittance Fig. 8. Transconductance 35 45 TJ = - 40ºC 40 30 25ºC g f s - Siemens ID - Amperes 35 TJ = 125ºC 25ºC - 40ºC 25 20 15 30 25 125ºC 20 15 10 10 5 5 0 0 3.5 4.0 4.5 5.0 5.5 6.0 0 6.5 5 10 15 VGS - Volts 20 25 30 35 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 40 10 VDS = 300V 9 35 I D = 11A 8 I G = 10mA 30 25 VGS - Volts IS - Amperes 7 20 15 6 5 4 TJ = 125ºC 3 10 TJ = 25ºC 2 5 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 5 VSD - Volts 10 15 20 25 30 35 40 QG - NanoCoulombs Fig. 11. Capacitance Fig. 12. Forward-Bias Safe Operating Area 10,000 100 f = 1 MHz RDS(on) Limit Ciss 10 ID - Amperes Capacitance - PicoFarads 100µs 1,000 Coss 100 1 10 TJ = 150ºC Crss TC = 25ºC Single Pulse 1ms 1 0.1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. 10 100 VDS - Volts 1,000 IXFP22N60P3 IXFQ22N60P3 IXFH22N60P3 Fig. 13. Maximum Transient Thermal Impedance 1 Z (th)JC - ºC / W 0.1 0.01 0.001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2011 IXYS CORPORATION, All Rights Reserved IXYS REF: F_22N60P3(W6)03-31-11