PolarHVTM HiPerFET Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFH 44N50P IXFK 44N50P IXFT 44N50P RDS(on) trr Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 500 500 V V VGSM VGSM Transient Continuous ±40 ±30 V V ID25 IDM TC = 25° C TC = 25° C, pulse width limited by TJM 44 110 A A IAR EAR EAS TC = 25° C TC = 25° C TC = 25° C 44 55 1.7 A mJ J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤150° C, RG = 10 Ω 10 V/ns PD = 500 V = 44 A ≤ 140 mΩ Ω ≤ 200 ns VDSS ID25 Maximum Ratings TC = 25° C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic case for 10 s Md Mounting torque (TO-247) Weight TO-247 TO-268 TO-264 650 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C TO-247 AD (IXFH) (TAB) TO-264 (IXFK) G D (TAB) S TO-268 (IXFT) G S (TAB) 1.13/10 Nm/lb.in. 6 5 10 G = Gate S = Source g g g D = Drain TAB = Drain Features Symbol Test Conditions (TJ = 25° C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 µA 500 VGS(th) VDS = VGS, ID = 4 mA 3.0 IGSS IDSS RDS(on) V 5.0 V VGS = ±30 VDC, VDS = 0 ±10 nA VDS = VDSS VGS = 0 V 25 500 µA µA TJ = 125° C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤300 µs, duty cycle d ≤ 2 % © 2006 IXYS All rights reserved 140 mΩ l l l International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l Easy to mount Space savings High power density DS99366E(03/06) IXFH44N50P IXFK 44N50P IXFT 44N50P Symbol Test Conditions Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. gfs VDS= 20 V; ID = 0.5 ID25, pulse test 20 Ciss Coss 32 S 5440 pF 639 pF 40 pF VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 28 ns tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 29 ns td(off) RG = 3 Ω (External) 85 ns tf 27 ns Qg(on) 98 nC 35 nC 30 nC TO-247 (IXFH) Outline 1 2 3 Terminals: 1 - Gate 3 - Source Dim. Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 0.19° C/W RthJC RthCS (TO-247) (TO-264) ° C/W ° C/W 0.21 0.15 Source-Drain Diode Characteristic Values (TJ = 25° C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 44 A ISM Repetitive 110 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V trr IF = 25 A, -di/dt = 100 A/µs QRM IRM VR = 100V, VGS = 0 V 200 0.6 6.0 Millimeter Min. Max. A 4.7 5.3 A1 2.2 2.54 A2 2.2 2.6 b 1.0 1.4 1.65 2.13 b1 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC ns µC A IXYS reserves the right to change limits, test conditions, and dimensions. 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC TO-268 (IXFT) Outline TO-264 (IXFK) Outline IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 2 - Drain Tab - Drain 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFH44N50P IXFK 44N50P IXFT 44N50P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 45 100 V GS = 10V 7V 40 80 35 70 30 25 I D - Amperes I D - Amperes V GS = 10V 8V 90 6V 20 15 7V 60 50 40 6V 30 10 20 5V 5 10 0 5V 0 0 1 2 3 4 5 6 7 0 3 6 9 12 15 18 21 24 27 30 V DS - Volts V DS - Volts Fig. 4. R DS(on) Normalized to ID = 22A Value v s. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 3.2 45 V GS = 10V 7V 40 V GS = 10V 2.8 R DS(on) - Normalized I D - Amperes 35 6V 30 25 20 15 5V 2.4 2 I D = 44A I D = 22A 1.6 1.2 10 0.8 5 0 0.4 0 2 4 6 8 10 12 14 -50 16 -25 V DS - Volts 50 75 100 125 150 Fig. 6. Maximum Drain Current v s. Case Temperature 3.2 50 V GS = 10V 45 2.8 TJ = 125ºC 2.6 40 2.4 35 I D - Amperes R DS(on) - Normalized 25 T J - Degrees Centigrade Fig. 5. R DS(on) Normalized to ID = 22A Value vs. Drain Current 3.0 0 2.2 2.0 1.8 1.6 30 25 20 15 1.4 TJ = 25ºC 1.2 10 5 1.0 0 0.8 0 10 20 30 40 50 I D - Amperes © 2006 IXYS All rights reserved 60 70 80 90 100 -50 -25 0 25 50 75 100 T C - Degrees Centigrade 125 150 IXFH44N50P IXFK 44N50P IXFT 44N50P Fig. 8. Transconductance Fig. 7. Input Admittance 65 60 60 55 55 50 50 45 g f s - Siemens I D - Amperes 45 40 35 30 TJ = 125ºC 25ºC - 40ºC 25 20 35 30 25 20 15 15 10 10 5 5 0 TJ = - 40ºC 25ºC 125ºC 40 0 3.5 4 4.5 5 5.5 6 6.5 0 10 20 V GS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 40 50 60 70 Fig. 10. Gate Charge 10 140 V DS = 250V 9 120 I D = 22A 8 100 I G = 10mA 7 V GS - Volts I S - Amperes 30 I D - Amperes 80 TJ = 125ºC 60 TJ = 25ºC 40 6 5 4 3 2 20 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 0 10 20 V SD - Volts 30 40 50 60 70 80 90 100 Q G - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 1,000 10,000 TJ = 150ºC TC = 25ºC Capacitance - PicoFarads C iss RDS(on) Limit I D - Amperes 1,000 C oss 100 25µs 100µs 10 100 1ms DC 10ms C rss f = 1 MHz 1 10 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V DS - Volts 1000 IXFH44N50P IXFK 44N50P IXFT 44N50P Fig. 13. Maximum Transient Thermal Resistance R (th)JC - ºC / W 1.00 0.10 0.01 0.0001 0.001 0.01 0.1 1 10 Pulse W idth - Seconds © 2006 IXYS All rights reserved IXYS REF: T_44N50P (8J) 03-21-06-B.xls