PolarHVTM HiPerFET Power MOSFET IXFH 18N60P IXFV 18N60P IXFV 18N60PS VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Fast Intrinsic Diode Avalanche Rated Symbol Test Conditions VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 600 V VGS Continuous ±30 V VGSM Tranisent ±40 V ID25 TC = 25°C 18 A IDM TC = 25°C, pulse width limited by TJM 45 A IAR TC = 25°C 18 A EAR TC = 25°C 30 mJ EAS TC = 25°C 1.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/μs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 5 Ω 10 V/ns PD Maximum Ratings TC = 25°C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Mounting torque Weight TO-247 PLUS220 & PLUS220SMD (TO-247) 360 W -55 ... +150 150 -55 ... +150 °C °C °C 300 260 °C °C D (TAB) PLUS220 (IXFV) G D D (TAB) S PLUS220SMD (IXFV...S) G Characteristic Values Min. Typ. Max. BVDSS VGS = 0 V, ID = 250 μA 600 VGS(th) VDS = VGS, ID = 2.5 mA 3.0 IGSS VGS = ±30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V V 5.5 V ±100 nA 25 250 μA μA l 400 mΩ l RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 μs, duty cycle d ≤ 2 % International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages l l l © 2006 IXYS All rights reserved D = Drain TAB = Drain Features l TJ = 125°C D (TAB) S g g G = Gate S = Source Symbol Test Conditions (TJ = 25°C, unless otherwise specified) 600 V 18 A Ω 400 mΩ 200 ns TO-247 AD (IXFH) 1.13/10 Nm/lb.in. 6 4 = = ≤ ≤ Easy to mount Space savings High power density DS99390E(03/06) IXFH 18N60P IXFV 18N60P IXFV 18N60PS Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = 0.5 ID25, Note 1 9 16 S 2500 pF 280 pF Crss 23 pF td(on) 21 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = ID25 22 ns td(off) RG = 5 Ω (External) 62 ns tf 22 ns Qg(on) 50 nC 15 nC 18 nC TO-247 (IXFH) Outline 1 2 3 Terminals: 1 - Gate 3 - Source Dim. Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCS 0.35 (TO-247, PLUS220) °C/W 0.21 Source-Drain Diode °C/W Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 18 A ISM Repetitive 54 A VSD IF = IS, VGS = 0 V, Note 1 1.5 V trr QRM FRM IS = 18 A, -di/dt = 100 A/μs VR = 100 V, VGS = 0 V 200 ns μC A 0.8 5 Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 A2 2.2 2.6 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 ∅P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC PLUS220SMD (IXFV_S) Outline IXYS reserves the right to change limits, test conditions, and dimensions. 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC PLUS220 (IXFV) Outline Note 1: Pulse test, t ≤ 300 μs, duty cycled ≤ 2 % IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 2 - Drain Tab - Drain 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 IXFH 18N60P IXFV 18N60P IXFV 18N60PS Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 40 18 V GS = 10V 8V 7V 16 14 30 12 I D - Amperes I D - Amperes V GS = 10V 8V 35 6V 10 8 7V 25 20 6V 15 6 10 4 5V 2 5 5V 0 0 0 1 2 3 4 5 6 7 8 0 3 6 9 12 15 18 21 24 27 30 V DS - Volts V DS - Volts Fig. 4. R DS(on) Normalized to ID = 9A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 3.2 18 V GS = 10V 7V 16 V GS = 10V 2.8 12 R DS(on) - Normalized I D - Amperes 14 6V 10 8 5V 6 2.4 I D = 18A 2 I D = 9A 1.6 1.2 4 0.8 2 0 0.4 0 2 4 6 8 10 12 14 16 -50 18 -25 V DS - Volts 25 50 75 100 125 150 T J - Degrees Centigrade Fig. 5. R DS(on) Normalized to ID = 9A Value vs. Drain Current Fig. 6. Maximum Drain Current v s. Case Temperature 20 3.2 3 V GS = 10V 18 TJ = 125ºC 2.8 16 2.6 14 2.4 I D - Amperes R DS(on) - Normalized 0 2.2 2 1.8 1.6 10 8 6 TJ = 25ºC 1.4 12 4 1.2 2 1 0.8 0 0 5 10 15 20 25 I D - Amperes © 2006 IXYS All rights reserved 30 35 40 45 -50 -25 0 25 50 75 T C - Degrees Centigrade 100 125 150 IXFH 18N60P IXFV 18N60P IXFV 18N60PS Fig. 8. Transconductance Fig. 7. Input Admittance 40 24 TJ = - 40ºC 25ºC 125ºC 35 20 g f s - Siemens I D - Amperes 30 25 20 15 16 12 8 TJ = 125ºC 25ºC - 40ºC 10 4 5 0 0 3.5 4 4.5 5 5.5 6 6.5 7 0 5 10 15 V GS - Volts Fig. 9. Forward Voltage Drop of Intrinsic Diode 25 30 35 40 Fig. 10. Gate Charge 10 70 V DS = 300V 9 60 I D = 9A 8 50 I G = 10mA 7 V GS - Volts I S - Amperes 20 I D - Amperes 40 TJ = 125ºC 30 6 5 4 TJ = 25ºC 3 20 2 10 1 0 0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 0 5 10 V SD - Volts 15 20 25 30 35 40 45 50 Q G - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 10,000 100 f = 1 MHz Capacitance - PicoFarads C iss RDS(on) Limits 25µs I D - Amperes 1,000 C oss 100µs 10 1ms 10ms 100 C rss TJ = 150ºC DC TC = 25ºC 10 1 0 5 10 15 20 25 30 35 40 V DS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V DS - Volts 1000 IXFH 18N60P IXFV 18N60P IXFV 18N60PS Fig. 13. Maximum Transient Thermal Resistance R (th)JC - ºC / W 1.000 0.100 0.010 0.0001 0.001 0.01 Pulse W idth - Seconds © 2006 IXYS All rights reserved 0.1 1 10