SEMICONDUCTOR KRA110S~KRA114S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES E B L L With Built-in Bias Resistors. 2 H A 3 G Reduce a Quantity of Parts and Manufacturing Process. 1 J C P N P EQUIVALENT CIRCUIT R1 MILLIMETERS _ 0.20 2.93 + 1.30+0.20/-0.15 1.30 MAX 0.45+0.15/-0.05 2.40+0.30/-0.20 1.90 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 0.20 MIN 1.00+0.20/-0.10 7 M K C B D Simplify Circuit Design. DIM A B C D E G H J K L M N P 1. EMITTER 2. BASE 3. COLLECTOR E SOT-23 MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -50 V Emitter-Base Voltage VEBO -5 V Collector Current IC -100 mA Collector Power Dissipation PC 200 mW Junction Temperature Tj 150 Tstg -55 150 Storage Temperature Range Marking MARK SPEC TYPE KRA110S KRA111S KRA112S KRA113S KRA114S MARK PK PM PN PO PP 2002. 7. 9 Revision No : 2 Lot No. Type Name 1/4 KRA110S~KRA114S ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=-50V, IE=0 - - -100 nA Emitter Cut-off Current IEBO VEB=-5V, IC=0 - - -100 nA DC Current Gain hFE VCE=-5V, IC=-1mA 120 - - IC=-10mA, IB=-0.5mA - -0.1 -0.3 V VCE=-10V, IC=-5mA - 250 - MHz KRA110S - 4.7 - KRA111S - 10 - - 100 - KRA113S - 22 - KRA114S - 47 - KRA110S - 0.2 - KRA111S - 0.065 - - 0.4 - KRA113S - 0.1 - KRA114S - 0.15 - KRA110S - 2.0 - VO=-5V - 1.7 - VIN=-5V - 3.0 - RL=1k - 2.0 - KRA114S - 1.5 - KRA110S - 0.3 - KRA111S - 0.3 - - 1.7 - KRA113S - 0.8 - KRA114S - 1.5 - Collector-Emitter Saturation Voltage fT * Transition Frequency Input Resistor KRA112S Rise Time VCE(sat) KRA112S R1 tr KRA111S Switching Storage Time Time KRA112S tstg KRA113S Fall Time KRA112S tf k S Note : * Characteristic of Transistor Only. 2002. 7. 9 Revision No : 2 2/4 KRA110S~KRA114S COLLECTOR-EMITTER SATURATIN VOLTAGE V CE(sat) (V) DC CURRENT GAIN h FE 2k h FE - I C KRA110S 1k 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 -100 -2 I C /IB =20 -1 -0.5 -0.3 -0.1 Ta=100 C -0.05 -0.03 Ta=25 C Ta=-25 C -0.01 -0.1 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATIN VOLTAGE V CE(sat) (V) DC CURRENT GAIN h FE 2k 1k 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 -100 -2 KRA111S 1k Ta=100 C Ta=25 C Ta=-25 C 100 50 30 VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 COLLECTOR CURRENT I C (mA) 2002. 7. 9 Revision No : 2 -10 -30 -100 VCE(sat) - I C -0.5 -0.3 -0.1 Ta=100 C -0.05 -0.03 Ta=25 C Ta=-25 C -0.01 -0.1 h FE - I C 500 300 -3 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE 2k -1 I C /I B =20 -1 COLLECTOR CURRENT I C (mA) KRA112S -0.3 COLLECTOR CURRENT I C (mA) h FE - I C KRA111S VCE(sat) - I C KRA110S -100 -2 KRA112S -1 VCE(sat) - I C IC /I B =20 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.1 Ta=100 C Ta=25 C Ta=-25 C -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) 3/4 KRA110S~KRA114S COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE 2k h FE - I C KRA113S 1k 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 VCE =-5V 10 -0.1 -0.3 -1 -3 -10 -30 -100 -2 KRA113S I C /I B =20 -1 -0.5 -0.3 -0.1 Ta=100 C -0.05 -0.03 Ta=25 C Ta=-25 C -0.01 -0.1 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE 2k 1k 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 10 -0.1 VCE =-5V -0.3 -1 -3 -10 -30 COLLECTOR CURRENT I C (mA) 2002. 7. 9 Revision No : 2 -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) h FE - I C KRA114S VCE(sat) - I C -100 -2 KRA114S VCE(sat) - I C I C /I B =20 -1 -0.5 -0.3 -0.1 -0.05 -0.03 -0.01 -0.1 Ta=100 C Ta=25 C Ta=-25 C -0.3 -1 -3 -10 -30 -100 COLLECTOR CURRENT I C (mA) 4/4