SEMICONDUCTOR TT1A6C TECHNICAL DATA Bi-Directional Triode Thyristor 1A Mold TRIAC AC POWER CONTROL APPLICATION. B C FEATURES A ・Repetitive Peak Off-state Voltage : VDRM=600V. ・R.M.S on-State Current : IT(RMS)=1A. ・High Commutation (dv/dt) N E K G J D APPLICATIONS ・Switching Mode Power Supply ・Speed Control of Small Motors H F F ・Solid State Relay 1 2 3 MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.45 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 0.55 MAX 2.30 0.45 MAX 1.00 M L ・Washing Machine C ・Light Dimmer DIM A B C D E F G H J K L M N ・Temperature Control of Heater 1. T1 2. GATE 3. T2 TO-92 MAXIMUM RATINGS (Ta=25℃) CHARACTERISTIC Repetitive Peak Off-state Voltage R.M.S On-state Current (Full Sine Waveform Tc=50℃) Peak One Cycle Surge On-state Current (Non-Repetitive) I t Limit Value (t=8.3mS) 2 Peak Gate Power Dissipation Average Gate Power Dissipation (TC=80℃, t≦8.3mS) SYMBOL RATING UNIT VDRM 600 V IT(RMS) 1 A ITSM 10 (60Hz 1 Cycle) A 2 It 0.6 A2S PGM 1 W PG(AV) 0.1 W Peak Gate Voltage (t≦2.0㎲, TC=80℃) VGM 5 V Peak Gate Current (t≦2.0㎲, TC=80℃) IGM 1 A Tj -40～125 ℃ Junction Temperature 2009. 2. 19 Revision No : 0 1/3 TT1A6C ELECTRICAL CHARACTERISTICS (Ta=25℃) CHARACTERISTIC SYMBOL IDRM Repetitive Peak Off-state Current TEST CONDITION Ⅱ VGT Ⅲ Gate Trigger Current TYP. MAX. UNIT - - 10 μA T2(+), Gate(+) - - 2.0 T2(+), Gate(-) - - 2.0 T2(-), Gate(-) - - 2.0 VDRM=Rated, Gate open Ⅰ Gate Trigger Voltage MIN. Ⅳ VD=12V, T2(-), Gate(+) - - 2.5 Ⅰ RL=100Ω T2(+), Gate(+) - - 5.0 T2(+), Gate(-) - - 5.0 Ⅲ T2(-), Gate(-) - - 5.0 Ⅳ T2(-), Gate(+) - - 7 - - 1.9 V 0.1 - - V VD=12V, ITM=±200mA - - 10 mA Rth(j-c) Junction to Case, AC - - 75 Rth(j-a) Junction to Ambient, AC - - 150 Ⅱ IGT Peak On-State Voltage VTM ITM=1A Gate Non-Trigger Voltage VGD VD=12V, RL=100Ω, Tj=110℃ IH Holding Current Thermal Resistance 2009. 2. 19 V Revision No : 0 mA ℃/W 2/3 ι GATE TRIGGER CHARACTERISTIC 10 VGM =6V P G(AV) =0.1W VGM 5 -40 C V GT 3 P GM =1W I GM 25 C VGT 1 -40 C I GT 25 C I GT 0.5 0.3 VGD =0.2V 0.1 1 3 10 30 100 300 1K INSTANTANEOUS ON-STATE CURRENT ι T (A) INSTANTANEOUS GATE VOLTAGE νG (V) TT1A6C 5 1 0.5 0.3 0.1 0.05 0.03 0.4 SURGE ON-STATE CURRENT (NON-REPETITIVE) 1.2 1.6 2.0 2.4 2.8 P T(AV) - I T(RMS) 10 1.4 8 6 4 2 1.2 1.0 0.8 0.6 0.4 0.2 0 0 1 3 5 10 30 50 0 100 NUMBER OF CYCLES AT 60Hz 0.2 140 Tc MAX 100 80 Ta MAX 60 40 20 0 0 0.2 0.4 0.6 0.8 1.0 1.2 R.M.S ON-STATE CURRENT I T(RMS) (A) Revision No : 0 0.6 0.8 1.0 1.2 1.4 r th(j-c) , r th(j-a) - t Tc MAX, Ta MAX - I T(RMS) 120 0.4 R.M.S ON-STATE CURRENT I T(RMS) (A) TRANSIENT THERMAL IMPEDANCE rth(j-c) , r th(j-a) ( C/W) MAXIMUM ALLOWABLE CASE AMBIENT TEMPERATURE Tc MAX, Ta MAX ( C) 0.8 INSTANTANEOUS ON-STATE VOLTAGE ν T (V) AVERAGE ON-STATE POWER DISSIPATION P T(AV) (W) PEAK SURGE ON-STATE CURRENT I TSM (A) T j =25 C 3 INSTANTANEOUS GATE CURRENT ι G (mA) 2009. 2. 19 − νT T 1.4 200 r th(j-a) (s) 100 50 30 r th(j-c) (s) 10 (ms) 5 3 1 1 3 10 30 100 300 1k TIME t (ms and s) 3/3