Shantou Huashan Electronic Devices Co.,Ltd. HTR1A60 BI-DIRECTIONAL TRIODE THYRISTOR (TRIAC) █ Features * Repetitive Peak Off-State Voltage: 600V * R.M.S On-state Current(IT(RMS)=1A) * High Commutation dv/dt █ General Description The Triac HTR1A60 is suitable for AC switching application, phase control application such as heater control, motor control, lighting control, and static switching relay. █ Absolute Maximum Ratings（Ta=25℃） Tstg ——Storage Temperature …………………………………………………………… -40~125℃ TJ ——Operating Junction Temperature ………………………………………………… -40~125℃ PGM ——Peak Gate Power Dissipation ………………………………………………………… 1W PG（AV） ——Average Gate Power Dissipation ………………………………………………… 0.1W VDRM ——Repetitive Peak Off-State Voltage ………………………………………………… 600V IT（RMS）——R.M.S On-State Current（Ta=58℃）…………………………………………… 1A VGM ——Peak Gate Voltage ……………………………………………………………………… 6V IGM ——Peak Gate Current ……………………………………………………………………… 0.5A ITSM ——Surge On-State Current (One Cycle, 50/60Hz,Peak,Non-Repetitive) ……………… 9.1/10A Shantou Huashan Electronic Devices Co.,Ltd. HTR1A60 █ Electrical Characteristics（Ta=25℃） Symbol IDRM Items Min. Typ. Repetitive Peak Off-state Current Max. Unit 0.5 mA Conditions VD=VDRM, Single Phase, Half Wave, VTM Peak On-State Voltage 1.6 V TJ=125℃ IT=1.5A, Inst. Measurement I+GT1 Gate Trigger Current（Ⅰ） 5.0 mA VD=6V, RL=10 ohm I-GT1 Gate Trigger Current（Ⅱ） 5.0 mA VD=6V, RL=10 ohm I-GT3 Gate Trigger Current（Ⅲ） 5.0 mA VD=6V, RL=10 ohm I+GT3 Gate Trigger Current（Ⅳ） 10.0 mA VD=6V, RL=10 ohm V+GT1 Gate Trigger Voltage（Ⅰ） 1.8 V VD=6V, RL=10 ohm V-GT1 Gate Trigger Voltage（Ⅱ） 1.8 V VD=6V, RL=10 ohm V-GT3 Gate Trigger Voltage（Ⅲ） 1.8 V VD=6V, RL=10 ohm V+GT3 Gate Trigger Voltage（Ⅳ） 2.0 V VD=6V, RL=10 ohm VGD (dv/dt)c Non-Trigger Gate Voltage 0.2 V TJ=125℃,VD=1/2VDRM Critical Rate of Rise of Off-State Voltage at Commutation 2.0 V/µS TJ=125℃,VD=2/3VDRM (di/dt)c=-0.5A/ms IH Holding Current 4.0 mA Rth(j-c) Thermal Resistance 50 ℃/W Junction to case Rth(j-a) Thermal Resistance 120 ℃/W Junction to Ambient Shantou Huashan Electronic Devices Co.,Ltd. HTR1A60 █ Performance Curves Fig 2. On-State Voltage Gate Voltage (V) On-state Current [A] Fig 1. Gate Characteristics Gate Current（mA） On-state Voltage（V） Fig 3. Gate Trigger Voltage vs. Junction Fig 4. On State Current vs. Maximum Power Dissipation Power Dissipation [W] Temperature Junction Temperature [℃] RMS On-state current [A] Fig 5. On State Current vs. Fig 6. Surge On-State Current Rating ( Non-Repetitive ) Surge On-state Current [A] Allowable Case Temp. [°C] Allowable Case Temperature RMS On-state Current [A] Time（Cycles） Shantou Huashan Electronic Devices Co.,Ltd. Fig 7. Gate Trigger Current vs. HTR1A60 Fig 8. Transient Thermal Impedance Fig 9. Gate Trigger Characteristics Test Circuit Impedance [℃/W ] Junction Temperature [℃] Transient Thermal Junction Temperature Time（sec） Time（sec） Junction Temperature [℃] Fig 9. Gate Trigger Characteristics Test Circuit 10Ω Test ProcedureⅠ 10Ω Test ProcedureⅡ 10Ω Test Procedure Ⅲ 10Ω Test Procedure Ⅳ