KEXIN 2SC4520

Transistors
SMD Type
NPN Epitaxial Planar Silicon Transistor
2SC4520
Features
Adoption of FBET, MBIT process.
Large current capacity.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Small-sized package.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
45
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
1.5
A
Collector current (pulse)
ICP
3
A
Collector dissipation
PC
1.3
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
www.kexin.com.cn
1
Transistors
SMD Type
2SC4520
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 45V, IE=0
1
ìA
Emitter cutoff current
IEBO
VEB = 3V, IC=0
1
ìA
DC current gain
hFE
VCE = 2V , IC = 100mA
fT
VCE = 2V , IC = 100mA
300
MHz
Cob
VCB = 10V , f = 1.0MHz
13
pF
Gain bandwidth product
Output capacitance
Collector-emitter saturation voltage
100
VCE(sat) IC = 800 mA , IB = 40mA
VBE(sat) IC = 800 mV , IB = 40mA
Base-emitter saturation voltage
400
0.25
0.7
0.9
1.3
V
V
Collector-base breakdown voltage
V(BR)CBO IC = 10ìA , IE = 0
60
V
Collector-emitter breakdown voltage
V(BR)CEO IC = 1mA , RBE =
45
V
Emitter-base breakdown voltage
V(BR)EBO IE = 10ìA , IC = 0
5
V
Turn-on time
ton
50
100
ns
Storage time
tstg
150
270
ns
tf
180
350
ns
Fall time
hFE Classification
CK
Marking
2
Min
Rank
R
S
T
hFE
100 200
140 280
200 400
www.kexin.com.cn