KEXIN 2SA1257

Transistors
SMD Type
PNP Epitaxial Planar Silicon Transistor
2SA1257
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
+0.1
1.3-0.1
+0.1
2.4-0.1
Features
0.4
3
1
Small output capacitance.
0.55
High breakdown voltage.
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-180
V
Collector-emitter voltage
VCEO
-160
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-80
mA
Collector current (pulse)
ICP
-150
mA
Collector dissipation
PC
200
mW
Jumction temperature
Tj
125
Storage temperature
Tstg
-55 to +125
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1
Transistors
SMD Type
2SA1257
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
IcBO
VCB = -120V , IE = 0
-0.1
ìA
Emitter cutoff current
IEBO
VEB = -4V , IC = 0
-0.1
ìA
DC current Gain
hFE
VCE = -5V , IC = -10 mA
fT
VCE = -10V , IC = -10 mA
130
Cob
VCB = -10V , f = 1MHz
2.4
VBE
VCE = -5V , IC = -10 mA
Gain bandwidth product
Output capacitance
Base-emitter voltage
Collector-emitter saturation voltage
Testconditons
Typ
60
270
VCE(sat) IC = -30mA , IB = -3mA
MHz
3.2
pF
-1.5
V
-0.7
V
Collector-to-base breakdown voltage
V(BR)CBO IC = -10ìA , IE = 0
-180
V
Collector-to-emitter breakdown voltage
V(BR)CEO IC = -1mA , RBE =
-160
V
Emitter-base breakdown voltage
V(BR)EBO IE = -10ìA , IC = 0
-5
V
Turn-on time
ton
0.15
ìs
Storage time
tstg
0.95
ìs
tf
0.15
ìs
Fall time
hFE Classification
2
Min
Rank
G3
G4
G5
hFE
60 120
90 180
135 270
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