KEXIN 2SB1124

Transistors
SMD Type
PNP Epitaxial Planar Silicon Transistors
2SB1124
Features
Adoption of FBET, MBIT processes.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Large current capacity and wide ASO.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-60
V
Collector-emitter voltage
VCEO
-50
V
Emitter-base voltage
VEBO
-6
V
Collector current
IC
-3
A
Collector current (pulse)
ICP
-6
A
Collector dissipation
PC
500
mW
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
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1
Transistors
SMD Type
2SB1124
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = -40V , IE = 0
-1
ìA
Emitter cutoff current
IEBO
VCB = -4V , IE = 0
-1
ìA
DC current Gain
hFE
VCE = -2V , IC = -100mA
fT
VCE = -10V , IC = -50mA
150
MHz
VCB = -10V , f = 1MHz
39
pF
Gain bandwidth product
Output capacitance
Cob
100
VCE(sat) IC = -2A , IB = -100mA
Collector-emitter saturation voltage
VBE(sat) IC = -2A , IB = -100mA
Base-emitter saturation voltage
560
-0.35
-0.7
-0.94
-1.2
V
V
Collector-base breakdown voltage
V(BR)CBO IC = -10ìA , IE = 0
-60
V
Collector-emitter breakdown voltage
V(BR)CEO IC = -1mA , RBE =
-50
V
Emitter-base breakdown voltage
V(BR)EBO IE = -10ìA , IC = 0
-6
V
Turn-on time
ton
70
ns
Storage time
tstg
450
ns
tf
35
ns
Fall time
hFE Classification
BG
Marking
Rank
hFE
2
Min
R
100
S
200
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140
T
280
200
U
400
280
560