KEXIN 2SA1730

Transistors
IC
SMD Type
PNP Epitaxial Planar Silicon
2SA1730
Features
Adoption of FBET , MBIT processes.
Large current capacity.
Low collector-to-emitter saturation voltage.
Fast switching speed.
Small-sized package.
Absolute Maximum Ratings Ta = 25
Parameter
Symbol
Rating
Unit
Collector-base voltage
VCBO
-50
V
Collector-emitter voltage
VCEO
-40
V
Emitter-base voltage
VEBO
-5
V
Collector current
IC
-3
A
Collector current (pulse)
ICP
-6
A
Collector dissipation *
PC
1.5
W
Jumction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
* Mounted on ceramic board (250mm2 X 0.8mm).
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1
Transistors
IC
SMD Type
2SA1730
Electrical Characteristics Ta = 25
Max
Unit
Collector cutoff current
Parameter
Symbol
IcBO
VCB = -40V , IE = 0
-1
ìA
Emitter cutoff current
IEBO
VEB = -3V , IC = 0
-1
ìA
DC current Gain
hFE
VCE = -2V , IC = -500mA
fT
VCE = -2V , IC = -500mA
300
MHz
Cob
VCB = -10V , f = 1MHz
35
pF
Collector-to-emitter saturation voltage
VCE(sat)
IC = -1.5A , IB =-75mA
-0.3
-0.8
V
Base-to-emitter saturation voltage
VBE(sat)
IC = -1.5A , IB =-75mA
-0.95
-1.3
V
Gain bandwidth product
Common base output capacitance
Testconditons
Typ
70
280
Collector-to-base breakdown voltage
V(BR)CBO IC = -10ìA , IE = 0
-50
V
Collector-to-emitter breakdown voltage
V(BR)CEO IC = -1mA , RBE =
-40
V
Emitter-to-base breakdown voltage
V(BR)EBO IE = -10ìA , IC = 0
-5
V
Turn-on time
ton
50
100
ns
Storage time
tstg
120
220
ns
Turn-off time
toff
150
300
ns
hFE Classification
AH
Marking
2
Min
Rank
Q
R
S
hFE
70 140
100 200
140 280
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