NTE NTE5564

NTE5562, NTE5564, NTE5566
Silicon Controlled Rectifiers (SCR’s)
Description:
The NTE5562, NTE5564 and NTE5566 are silicon controlled rectifiers in a TO–48 isolated stud
TO–48 type package designed for industrial and consumer applications such as power supplies, battery chargers, temperature, motor, light and welder controls.
Absolute Maximum Ratings:
Repetitive Peak Off–State Voltage & Reverse Voltage (TJ = +100°C), VDRM, VRRM
NTE5562 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200
NTE5564 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
NTE5566 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On–State Current (TC = +75°C), IT(RMS) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35A
Peak Surge (Non–Repetitive) On–State Current, ITSM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300A
Peak Gate–Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Peak Gate–Power Dissipation (IGT ≤ for 3µs Max), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Operating Temperature Range, Toper . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –40° to +150°C
Typical Thermal Resistance, Junction–to–Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.6/W
Electrical Characteristics: (At Maximum Ratings and Specified Case Temperatures)
Parameter
Symbol
Test Conditions
Min
Typ
Peak Off–State Current
IDRM,
IRRM
TJ = +100°C, Gate Open, VDRM &VRRM
–
–
2.0
mA
Maximum On–State Voltage (Peak)
VTM
TC = +25°C
–
–
1.6
V
DC Holding Current
IHO
TC = +25°C, Gate Open
–
–
50
mA
DC Gate Trigger Current
IGT
Anode Voltage = 12Vdc, RL = 30Ω,
TC =+ 25°C
–
–
30
mA
DC Gate Controlled Turn–On Time
TGT
IGT = 150mA , tD+tR
–
2.5
–
µs
TC = +100°C, Gate Open
–
100
–
V/µs
Critical Rate of Rise of Off–State Voltage
Critical
dv/dt
Max Unit
.562
(14.28)
Max
Cathode
Anode
Gate
1.260
(32.0)
Max
.595
(15.1)
Max
.445
(11.3)
Max
1/4–28 UNF–2A
Isolated Stud