NTE NTE5360

NTE5360
Silicon Controlled Rectifier (SCR)
35 Amp
Absolute Maximum Ratings and Electrical Characteristics:
Repetitive Peak Off State Voltage (Gate Open, TJ = +110°C), VDRM . . . . . . . . . . . . . . . . . . . . . 600V
Repetitive Peak Reverse Voltage (Gate Open, TJ = +110°C), VRRM . . . . . . . . . . . . . . . . . . . . . . 600V
RMS On−State Current (TC = +80°C, 360° Conduction Angle), IT(RMS) . . . . . . . . . . . . . . . . . . . . 40A
Peak Surge (Non−Repetitive) On−State Current (One Cycle, 50 or 60Hz), ITSM . . . . . . . . . . . 400A
Peak Gate Trigger Current (3µs Max), IGTM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2A
Peak Gate Power (IGT ≤ IGTM), PGM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20W
Average Gate Power Dissipation, PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mW
Maximum Repetitive Peak Off−State Current (At VDRM, TC = +110°C), IDRM . . . . . . . . . . . . . . 1.0mA
Maximum Repetitive Peak Reverse Current (At VRRM, TC = +110°C), IRRM . . . . . . . . . . . . . . . 1.0mA
Maximum Peak On−State Voltage (TC = +25°C, IT = 40A), VTM . . . . . . . . . . . . . . . . . . . . . . . . . 1.6V
Maximum DC Holding Current (Gate Open, TC = +25°C), IH . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Critical Rate of Rise of Off−State Voltage (Gate Open, TC = +110°C), dv/dt . . . . . . . . . . . . 200V/µs
Maximum DC Gate Trigger Current (VA = 12V, RL = 60Ω, TC = +25°C), IGT . . . . . . . . . . . . . . 25mA
Maximum DC Gate Trigger Voltage (VA = 12V, RL = 60Ω, TC = +25°C), VGT . . . . . . . . . . . . . . . 2.0V
gate Controlled Turn−On Time (For td and tr, IGT = 150mA, TC = +25°C), tgt . . . . . . . . . . . . . . 2.5µs
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40° to +150°C
Typical Thermal Resistance, Junction−to−Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4°C/W
.562
(14.28)
Max
Gate
Cathode
1.193
(30.33)
Max
.200 (5.08) Max
.453
(11.5)
Max
Anode
1/4−28 UNF−2A