polyfet rf devices F1419 General Description PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. TM "Polyfet" process features gold metal for greatly extended lifetime. Low output capacitance and high Ft enhance broadband performance 40 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR, HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS (TC = 25 C) Total Device Dissipation Junction to Case Thermal Resistance 100 Watts Maximum Junction Temperature 1.5 o C/W 200 o C Storage Temperature DC Drain Current Drain to Gate Voltage Drain to Source Voltage Gate to Source Voltage -65 o C to 150o C 4 A 150 V 150 V 30V RF CHARACTERISTICS ( SYMBOL PARAMETER Gps Common Source Power Gain η Drain Efficiency VSWR MIN TYP 40 WATTS OUTPUT ) MAX 10 65 Load Mismatch Tolerance 20:1 UNITS TEST CONDITIONS dB Idq = 0.8 A, Vds = 50.0 V, F = 400 MHz % Idq = 0.8 A, Vds = 50.0 V, F = 400 MHz Relative Idq = 0.8 A, Vds = 50.0 V, F = 400 MHz ELECTRICAL CHARACTERISTICS (EACH SIDE) SYMBOL PARAMETER MIN TYP MAX UNITS Bvdss Drain Breakdown Voltage 125 Idss Zero Bias Drain Current 4 Igss Gate Leakage Current Vgs Gate Bias for Drain Current gM Forward Transconductance 1.6 Mho Vds = 10V, Vgs = 5V Rdson Saturation Resistance 0.7 Ohm Vgs = 20V, Ids = 4 A Idsat Saturation Current 9.6 Amp Vgs = 20V, Vds = 10V Ciss Common Source Input Capacitance 90 pF Vds = 50.0 V, Vgs = 0V, F = 1 MHz Crss Common Source Feedback Capacitance 4.4 pF Vds = 50.0 V, Vgs = 0V, F = 1 MHz Coss Common Source Output Capacitance 40 pF Vds = 50.0 V, Vgs = 0V, F = 1 MHz V 1 TEST CONDITIONS 0.1 A, Vgs = 0V mA Vds = 50.0 V, Vgs = 0V 1 uA Vds = 0 V, Vgs = 30V 7 V Ids = 0.2 A, Vgs = Vds POLYFET RF DEVICES Ids = REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com F1419 POUT VS PIN GRAPH CAPACITANCE VS VOLTAGE F1E 2 DIE CAPACITANCE F1419 POUT VS PIN F=400 MHZ; IDQ=0.8A; VDS=50V 1000 50 15.00 45 14.00 40 35 13.00 Ciss 100 30 25 12.00 Coss 20 11.00 15 Efficiency = 25% 10 10 Crss 10.00 5 0 9.00 0 1 2 3 4 5 PIN IN WATTS 1 6 POUT 0 5 10 15 20 GAIN 25 30 35 40 45 50 VDS IN VOLTS IV CURVE ID AND GM VS VGS F1E 2 DIE IV 10.00 7 Id in amps; Gm in mhos F1E 2 DIE ID & GM Vs VG 8 6 Id 1.00 ID IN AMPS 5 4 3 gM 0.10 2 1 0.01 0 0 2 4 vg=2v 6 Vg=4v 8 10 12 VDSINVOLTS Vg=6v vg=8v 14 16 0 S11 AND S22 SMITH CHART 18 20 0 2 vg=12v 4 6 8 10 12 14 16 18 Vgs in Volts PACKAGE DIMENSIONS IN INCHES Tolerance 0.XX +/- 0.01 0.XXX +/- 0.005 inches POLYFET RF DEVICES REVISION 8/1/97 1110 Avenida Acaso, Camarillo, CA 93012 TEL:(805) 484-4210 FAX:(805) 484-3393 EMAIL:[email protected] URL:www.polyfet.com