SAVANTIC 2SB1369

SavantIC Semiconductor
Product Specification
2SB1369
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220 package
·High collector power dissipation
·High current capability
APPLICATIONS
·For general purpose applications
PINNING
PIN
DESCRIPTION
1
Emitter
2
Collector;connected to
mounting base
3
Base
Fig.1 simplified outline (TO-220) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-60
V
VCEO
Collector -emitter voltage
Open base
-60
V
VEBO
Emitter-base voltage
Open collector
-5
V
IC
Collector current
-3
A
ICM
Collector current-peak
-6
A
PC
Collector power dissipation
Ta=25
2.0
W
TC=25
40
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SB1369
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-1mA; IB=0
-60
V
V(BR)CBO
Collector-base breakdown voltage
IC=-50µA; IE=0
-60
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-50µA; IC=0
-5
V
VCEsat
Collector-emitter saturation voltage
IC=-2A ;IB=-0.2A
-1.5
V
VBEsat
Base-emitter saturation voltage
IC=-2A; IB=-0.2A
-1.5
V
ICBO
Collector cut-off current
VCB=-60V; IE=0
-10
µA
IEBO
Emitter cut-off current
VEB=-4V; IC=0
-10
µA
hFE
DC current gain
IC=-0.5A ; VCE=-5V
Transition frequency
IC=-0.5A; VCE=-5V
15
MHz
Collector output capacitance
f=1MHz ; VCB=10V
80
pF
fT
COB
CONDITIONS
2
MIN
TYP.
100
MAX
UNIT
320
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
2SB1369