SavantIC Semiconductor Product Specification 2SC1913 2SC1913A Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SA913/913A ·Large collector power dissipation ·High VCEO APPLICATIONS ·Audio frequency high power driver PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS 2SC1913 VCBO Collector-base voltage 150 Open base 2SC1913A VEBO Emitter-base voltage V 180 2SC1913 Collector-emitter voltage UNIT 150 Open emitter 2SC1913A VCEO VALUE V 180 Open collector 5 V 1 A 1.5 A 15 W IC Collector current ICM Collector current-peak PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC1913 2SC1913A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO V(BR)EBO VCEsat VBEsat PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SC1913 MIN TYP. UNIT 150 IC=0.1mA ,IB=0 2SC1913A Emitter-base breakdown voltage V 180 IE=10µA ,IC=0 5 V 2SC1913 Collector-emitter saturation voltage MAX 1.0 IC=0.3A; IB=30mA V 1.5 2SC1913A Base-emitter saturation voltage IC=0.3A; IB=30mA 1.5 V ICBO Collector cut-off current VCB=120V; IE=0 1 µA IEBO Emitter cut-off current VEB=4V; IC=0 1 µA hFE-1 DC current gain IC=150mA ; VCE=10V 65 hFE-2 DC current gain IC=500mA ; VCE=5V 50 COB Output capacitance IE=0 ; VCB=100V;f=1MHz fT Transition frequency IC=50mA ; VCE=10V hFE-1 Classifications P Q R S 65-110 90-155 130-220 185-330 2 330 15 120 pF MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1913 2SC1913A PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3