SavantIC Semiconductor Product Specification 2SB720 Silicon PNP Power Transistors DESCRIPTION ·With TO-220 package ·High VCEO ·High power dissipation APPLICATIONS ·Power amplifier ·TV vertical deflection output PINNING PIN DESCRIPTION 1 Emitter 2 Collector;connected to mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -200 V VCEO Collector-emitter voltage Open base -200 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -2.0 A ICM Collector current-peak -3.0 A PT Total power dissipation 25 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SB720 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-5mA ,IB=0 -200 V V(BR)CBO Collector-base breakdown voltage IC=-0.1mA ,IE=0 -200 V V(BR)EBO Emitter-base breakdown voltage IE=-0.1mA ,IC=0 -5 V VCEsat Collector-emitter saturation voltage IC=-500mA; IB=-50mA -1.0 V VBEsat Base-emitter saturation voltage IC=-500mA; IB=-50mA -1.5 V ICBO Collector cut-off current VCB=-200V; IE=0 -10 µA IEBO Emitter cut-off current VEB=-5V; IC=0 -10 µA hFE DC current gain IC=-0.15A ; VCE=-5V Transition frequency IC=-0.15A ; VCE=-5V fT CONDITIONS 2 MIN TYP. 35 MAX UNIT 200 100 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 2SB720