SavantIC Semiconductor Product Specification 2SC2022 Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage APPLICATIONS ·Series regulator, switch, and general purpose applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 300 V VCEO Collector-emitter voltage Open base 300 V VEBO Emitter-base voltage Open collector 6 V 1 A 30 W IC Collector current PC Collector dissipation Tj Junction temperature 150 Tstg Storage temperature -50~150 TC=25 SavantIC Semiconductor Product Specification 2SC2022 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=25mA ; IB=0 300 V V(BR)CBO Collector-base breakdown voltage IC=1mA ; IE=0 300 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ; IC=0 6 V Collector-emitter saturation voltage IC=500mA; IB=100mA 1.0 V ICBO Collector cut-off current VCB=300V ;IE=0 1.0 mA IEBO Emitter cut-off current VEB=6V; IC=0 1.0 mA hFE DC current gain IC=200m A ; VCE=4V Transition frequency IC=100mA ; VCE=12V VCEsat fT CONDITIONS 2 MIN TYP. MAX UNIT 30 10 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC2022