SavantIC Semiconductor Product Specification 2SC4747 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFM package ·High speed switching ·High breakdown voltage APPLICATIONS ·Character display horizontal deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PFM) and symbol Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 6 V Collector current 10 A Collector current-surge 20 A 50 W IC IC(surge) PC Collector power dissipation TC=25 Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SC4747 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;RBE=0 V(BR)EBO Emitter-base breakdown voltage IE=10mA ;IC=0 ICES Collector cut-off current VCE=1500V; RBE=0 hFE DC current gain IC=1A ; VCE=5V VCE(sat) Collector-emitter saturation voltage IC=8A ; IB=1.6A 5 V VBE(sat) Base-emitter saturation voltage IC=8A ; IB=1.6A 1.5 V Fall time ICP=7A;IB1=1.4A 0.3 µs tf CONDITIONS 2 MIN TYP. MAX UNIT 800 V 6 V 0.5 8 mA 30 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SC4747 SavantIC Semiconductor Product Specification 2SC4747 Silicon NPN Power Transistors 4