SAVANTIC 2SC3026

SavantIC Semiconductor
Product Specification
2SC3026
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·High breakdown voltage
APPLICATIONS
·High voltage power switching character
display horizontal deflection output
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1700
V
VCEO
Collector-emitter voltage
Open base
800
V
VEBO
Emitter-base voltage
Open collector
6
V
IC
Collector current
5
A
ICP
Collector current-peak
6
A
PC
Collector power dissipation
50
W
Tj
Junction temperature
150
Tstg
Storage temperature
-45~150
TC=25
SavantIC Semiconductor
Product Specification
2SC3026
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=10mA ;RBE=9
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA; IC=0
VCE(sat)
Collector-emitter saturation voltage
IC=5A; IB=1.25A
2.0
V
VBE(sat)
Base-emitter saturation voltage
IC=5A; IB=1.25A
1.5
V
Collector cut-off current
VCE=1700V; RBE=9
0.5
mA
ICES
CONDITIONS
MIN
TYP.
MAX
UNIT
800
V
6
V
Switching times
ts
Storage time
tf
Fall time
4.0
µs
IC=5A; IB1=1A;IB2=-2.5A
0.5
2
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
2SC3026