SAVANTIC 2SD1591

SavantIC Semiconductor
Product Specification
2SD1591
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220Fa package
·DARLINGTON
·Complement to type 2SB1100
APPLICATIONS
·Low frequency power amplification
·Low speed power switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
3
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
150
V
VCEO
Collector-emitter voltage
Open base
100
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current (DC)
10
A
ICM
Collector current-Peak
15
A
IB
Base current (DC)
0.5
A
PC
Collector power dissipation
Ta=25
2
TC=25
30
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD1591
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=10A; IB=25mA
1.5
V
VBEsat
Base-emitter saturation voltage
IC=10A; IB=25mA
2.0
V
ICBO
Collector cut-off current
VCB=100V; IE=0
10
µA
ICEO
Collector cut-off current
VCE=100V; IE=0
500
µA
IEBO
Emitter cut-off current
VEB=7V ;IC=0
5
mA
hFE
DC current gain
IC=10A ; VCE=2V
2
MIN
TYP.
MAX
100
1000
UNIT
V
30000
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
2SD1591