SavantIC Semiconductor Product Specification 2SD1264 2SD1264A Silicon NPN Power Transistors DESCRIPTION ·With TO-220Fa package ·Complement to type 2SB940/940A ·High collector to emitter voltage VCEO ·Large collector power dissipation PC · APPLICATIONS ·For power amplification ·For TV vertical deflection output applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage CONDITIONS Open emitter 2SD1264 Emitter-base voltage UNIT 200 V 150 Open base 2SD1264A VEBO VALUE V 180 Open collector 6 V IC Collector current 2 A ICM Collector current-peak 3 A PC Collector power dissipation Ta=25 2 TC=25 30 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD1264 2SD1264A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD1264 VCEO Collector-emitter voltage MIN TYP. MAX UNIT 150 IC=5mA ,IB=0 V 180 2SD1264A VCBO Collector-base voltage IC=50µA ,IE=0 200 V VEBO Emitter-base voltage IC=500µA ,IC=0 6 V VCEsat Collector-emitter saturation voltage IC=0.5A, IB=50mA 1.0 V VBE Base-emitter voltage IC=0.4A ; VCE=10V 1.0 V IEBO Emitter cut-off current VEB=4V; IC=0 50 µA ICBO Collector cut-off current VCB=200V; IE=0 50 µA hFE-1 DC current gain IC=0.15A ; VCE=10V 60 hFE-2 DC current gain IC=0.4A ; VCE=10V 50 Transition frequency IC=0.5A; VCE=10V,f=10MHz fT hFE-1 Classifications Q P 60-140 100-240 2 240 20 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1264 2SD1264A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance: ±0.15 mm) 3 SavantIC Semiconductor Product Specification 2SD1264 2SD1264A Silicon NPN Power Transistors 4