SavantIC Semiconductor Product Specification MJE18004 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·High voltage ,high speed APPLICATIONS ·Designed for use in 220V line-operated switchmode power supplies and electronic light ballasts PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1000 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 9 V IC Collector current (DC) 5 A ICM Collector current-Peak 10 A IB Base current 2 A IBM Base current-Peak 4 A PD Total power dissipation 100 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-C Thermal resistance junction to case 1.25 /W Rth j-A Thermal resistance junction to ambient 62.5 /W SavantIC Semiconductor Product Specification MJE18004 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; L=25mH VCE(sat)-1 Collector-emitter saturation voltage IC=1A ;IB=0.1A TC=125 0.5 0.6 V VCE(sat)-2 Collector-emitter saturation voltage IC=2A ;IB=0.4A TC=125 0.45 0.8 V VCE(sat)-3 Collector-emitter saturation voltage IC=2.5A ;IB=0.5A 0.75 V VBE(sat)-1 Base-emitter saturation voltage IC=1A ;IB=0.1A 1.1 V VBE(sat)-2 Base-emitter saturation voltage IC=2A ;IB=0.4A 1.25 V VBE(sat)-3 Base-emitter saturation voltage IC=2.5A ;IB=0.5A 1.3 V ICES Collector cut-off current CONDITIONS MIN TYP. MAX 450 UNIT V 0.1 VCES=RatedVCES; VEB=0 0.5 mA TC=125 VCES=800V 0.1 ICEO Collector cut-off current VCE=RatedVCEO; IB=0 0.1 mA IEBO Emitter cut-off current VEB=9V; IC=0 0.1 mA hFE-1 DC current gain IC=1A ; VCE=2.5V 12 hFE-2 DC current gain IC=1A ; VCE=5V 14 hFE-3 DC current gain IC=2A ; VCE=1V 6 hFE-4 DC current gain IC=5mA ; VCE=5V 10 Transition frequency IC=0.5A ; VCE=10V;f=1.0MHz 13 MHz Collector outoput capacitance IE=0 ; VCB=10V;f=1.0MHz 45 pF fT COB 36 Switching times resistive load,Duty CycleC10%,Pulse Width=20µs ton Turn-on time ts Storage time tf Fall time VCC=250V ,IC=2.5A IB1=0.5A; IB2=0.5A 2 0.6 µs 3.0 µs 0.4 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3 MJE18004