SAVANTIC 2SD1025

SavantIC Semiconductor
Product Specification
2SD1025
Silicon NPN Power Transistors
DESCRIPTION
·With TO-220 package
·High DC current gain
·DARLINGTON
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
200
V
VCEO
Collector-emitter voltage
Open base
200
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
8
A
ICM
Collector current-Peak
12
A
IB
Base current
0.5
A
IBM
Base current-Peak
1.0
A
PT
Total power dissipation
50
W
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
TC=25
THERMAL CHARACTERISTICS
SYMBOL
R8j-C
PARAMETER
Thermal resistance junction to case
VALUE
2.5
UNIT
/W
SavantIC Semiconductor
Product Specification
2SD1025
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=5A; IB=10mA
1.5
V
VBEsat
Base-emitter saturation voltage
IC=5A ;IB=10mA
2.0
V
ICBO
Collector cut-off current
VCB=200V ;IE=0
0.1
mA
ICEO
Collector cut-off current
VCE=200V; IB=0
0.1
mA
IEBO
Emitter cut-off current
VEB=7V; IC=0
5.0
mA
hFE
DC current gain
IC=5A ; VCE=3V
Transition frequency
IC=0.8A ; VCE=10V
fT
CONDITIONS
MIN
TYP.
MAX
200
UNIT
V
1500
30000
20
MHz
Switching times
ton
Turn-on time
ts
Storage time
tf
Fall time
IC=5A
IB1=- IB2=10mA
RL=5C; VBB2=4V
2
2.0
µs
8.0
µs
5.0
µs
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
2SD1025