S2N7002KW 115mA, 60V N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES z z z z z Low on-resistance Fast switching Speed Low-voltage drive Easily designed drive circuits ESD protected:1500V A L 3 3 C B Top View 1 1 K 2 E 2 D F REF. A B C D E F DEVICE MARKING: RK H G Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 REF. G H J K L J Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT V Drain – Source Voltage VDSS 60 Continuous Gate – Source Voltage VGSS ±20 V ID 115 mA Continuous Drain Current Pulsed Drain Current IDP 1 800 mA Continuous Reverse Drain Current IDR 115 mA 1 Pulsed Reverse Drain Current IDRP 800 mA 2 225 mW 150, -55~150 °C Total Power Dissipation PD Channel & Storage Temperature Range TCH, TSTG Note: 1. Pw≦10μS, Duty cycle≦1% 2. When mounted on a 1x0.75x0.062 inch glass epoxy board ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified, per element) PARAMETER SYMBOL MIN TYP MAX OFF CHARACTERISTICS Drain-Source Breakdown Voltage UNIT TEST CONDITION 2 V(BR)DSS 60 - Zero Gate Voltage Drain Current IDSS - - 1.0 μA VDS=60V, VGS=0V Gate-Source Leakage IGSS - - ±10 μA VDS=0V , VGS=±20V ON CHARACTERISTICS Gate-Threshold Voltage Static Drain-Source On Resistance Forward Transfer Admittance VGS(TH) RDS(ON) gFS* - V VGS=0V, ID =10μA 2 1 1.85 2.5 - - 7.5 - - 7.5 80 - - V Ω VDS= VGS, ID =250μA VGS=10V, ID=0.5A VGS=5V, ID=0.05A ms VDS=10V, ID=0.2A pF VGS=0V DYNAMIC CHARACTERISTICS Input Capacitance CISS - 25 50 Output Capacitance COSS - 10 25 Reverse Transfer Capacitance CRSS - 3.0 5 VDS=25V f=1MHz SWITCHING CHARACTERISTICS Turn-on Delay Time Td(ON) * - 12 20 Turn-off Delay Time Td(OFF) * - 20 30 nS VDD=30V, I D=0.2A RL=150Ω, V Gs=10V, RG=10Ω * Pw≦300μS, Duty cycle≦1% 10-Jan-2010 Rev. A Page 1 of 2 S2N7002KW Elektronische Bauelemente 115mA, 60V N-Channel Enhancement MOSFET CHARACTERISTIC CURVES 10-Jan-2010 Rev. A Page 2 of 2