S2N7002K 115mA, 60V N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-23 A L 3 3 FEATURES C B Top View 1 1 3 DRAIN Low on resistance. Fast switching speed. Low-voltage drive. Easily designed drive circuits. Easy to parallel. Pb-Free package is available. ESD protected:2000V K 2 E 2 D 1 GATE F * * Gate Pretection Diode REF. A B C D E F SOURCE 2 DEVICE MARKING: RK H G Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 REF. G H J K L J Millimeter Min. Max. 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 MAXIMUM RATINGS (TA = 25°C unless otherwise specified) SYMBOL RATING Drain – Source Voltage PARAMETER VDSS 60 V Gate – Source Voltage VGSS ±20 V Drain Current Drain Reverse Current Continuous Pulsed Continuous 115 mA 0.8 A mA IDR 115 0.8 A PD2 225 mW TCH, TSTG 150, -55~150 °C Total Power Dissipation Channel & Storage Temperature ID IDP1 IDRP1 Pulsed Note: 1. Pulse width ≦10µS, Duty cycle≦1%. UNIT 2. When mounted on 1x0.75x0.062 inch glass epoxy board. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX IGSS - - ±10 Drain-Source Breakdown Voltage V(BR)DSS 60 - - Zero Gate Voltage Drain Current IDSS - - 1 µA VGS(TH) 1 1.85 2.5 V VDS= VGS, ID =250µA - - 7.5 - - 7.5 Ω VGS=10V, ID=0.5A |YFS|* 80 - - mS VDS=10V, ID=0.2A Input Capacitance CISS - 25 50 Output Capacitance COSS - 10 25 pF VDS=25V VGS=0V f=1MHz nS VDD≒30V, V Gs=10V I D=200mA, RL=150Ω, RGS=10Ω Gate-Source Leakage Current Gate Threshold Voltage Drain-Source On-State Resistance* Forward Transfer Admittance Reverse Transfer Capacitance RDS(ON) * CRSS - 3.0 5.0 Turn-on Delay Time Td(ON) * - 12 20 Turn-off Delay Time Td(OFF) * - 20 30 UNIT TEST CONDITION µA VGS=±20V, VDS=0V V VGS=0V, ID =10µA VDS=60V, VGS=0V VGS=5V, ID=0.05A * Pulse width ≦300µS, Duty cycle≦1% SWITCHING CHARACTERISTICS MEASUREMENT CIRCUIT 08-Mar-2010 Rev. B Page 1 of 3 S2N7002K Elektronische Bauelemente 115mA, 60V N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES 08-Mar-2010 Rev. B Page 2 of 3 S2N7002K Elektronische Bauelemente 115mA, 60V N-Channel Enhancement Mode Power MOSFET CHARACTERISTIC CURVES 08-Mar-2010 Rev. B Page 3 of 3