SST3585 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-26 The SST3585 provide the designer with best combination of fast switching, low on-resistance and cost effectiveness. The SOT-26 package is universally used for all commercial-industrial surface mount applications. D H A FEATURES Low Gate Charge Low On-resistance E MARKING CODE 3585 A B C D E F = Date Code B J L F K G Millimeter Min. Max. 2.70 3.10 2.60 3.00 1.20 REF. 1.40 1.80 0.95 REF. 0.60 REF. REF. C REF. G H J K L Millimeter Min. Max. 0.37 REF. 0.30 0.55 0.12 REF. 0.10 TOP VIEW PACKAGE INFORMATION Package MPQ Leader Size SOT-26 3K 7 inch ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Ratings Symbol Unit N-Channel P-Channel Drain-Source Voltage VDS 20 -20 V Gate-Source Voltage VGS ±12 ±12 V 3.5 -2.5 2.8 -1.97 10 -10 TA = 25°C Continuous Drain Current 3 TA = 70°C Pulsed Drain Current 1 IDM Power Dissipation Maximum Junction to Ambient ID 3 http://www.SeCoSGmbH.com/ 03-Jan-2012 Rev. G A PD 1.14 W RθJA 110 °C / W 0.01 W / °C -55~150 °C Linear Derating Factor Operating Junction & Storage Temperature Range A TJ, TSTG Any changes of specification will not be informed individually. Page 1 of 7 SST3585 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Drain-Source Breakdown Voltage N-Ch Breakdown Voltage Temp. Coefficient N-Ch Gate-Threshold Voltage Forward Transconductance Gate-Source Leakage Current P-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch BVDSS △BVDSS/△TJ VGS(th) gfs IGSS N-Ch Drain-Source Leakage Current Drain-Source On-Resistance 1 P-Ch Gate-Source Charge Gate-Drain Charge Turn-on Delay Time1 Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance http://www.SeCoSGmbH.com/ 03-Jan-2012 Rev. G Max. 20 - - -20 - - - 0.02 - - -0.01 - 0.5 - 1.2 - - -1.2 - 7 - - 4 - - - ±100 - - ±100 - - 1 Unit V V/°C V S nA Test Conditions VGS=0, ID=250μA VGS=0, ID= -250μA Reference to 25°C, ID=1mA Reference to 25°C, ID= -1mA VDS=VGS, ID=250μA VDS=VGS, ID= -250μA VDS=5V, ID=3A VDS= -5V, ID= -2A VGS= ±12V VGS= ±12V VDS=20 V, VGS=0 - - -1 - - 10 P-Ch - - -25 VDS= -16V, VGS=0 N-Ch - - 75 VGS=4.5V, ID=3.5A - - 160 N-Ch P-Ch N-Ch IDSS RDS(ON) P-Ch Total Gate Charge1 Min. Typ. Static N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss Rg - - 125 - - 300 - 4 7 - 5 8 - 0.7 - - 1 - - 2 - - 2 - - 6 - - 6 - - 8 - - 17 - - 10 - - 16 - - 3 - - 5 - - 430 520 - 630 750 - 55 - - 50 - - 40 - - 40 - - 1.4 1.7 - 7 10 μA mΩ VDS= -20 V, VGS=0 VDS=16V, VGS=0 VGS= -4.5V, ID= -2.5A VGS=2.5V, ID=1.2A VGS= -2.5V, ID= -2A N-Channel VDS=16V, VGS=4.5V, ID=3A nC P-Channel VDS= -16V, VGS= -4.5V, ID= -2A N-Channel VDS=15V, RG=3.3Ω,RD=15Ω VGS=5V, ID=1A nS P-Channel VDS= -10V, RG=3.3Ω,RD=10Ω VGS= -10V, ID= -1A N-Channel VGS=0, VDS=20V, f=1.0MHz pF P-Channel VGS=0, VDS= -20V, f=1.0MHz Ω f=1.0MHz Any changes of specification will not be informed individually. Page 2 of 7 SST3585 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Source-Drain Diode Forward On Voltage1 Reverse Recovery Time Reverse Recovery Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch VSD TRR Qrr - - 1.2 - - -1.2 - 16 - - 20 - - 8 - - 15 - V ns nC IS=1.2A, VGS=0 IS= -1.2A, VGS=0 IS=3A, VGS=0 ,dI/dt=100A/μs IS= -2A, VGS=0 ,dI/dt=100A/μs IS=3A, VGS=0 ,dI/dt=100A/μs IS= -2A, VGS=0 ,dI/dt=100A/μs Notes: 1 Pulse width limited by Max. junction temperature. 2 Pulse width≦300μs, duty cycle≦2%. 2 3 Surface mounted on 1 in copper pad of FR4 board; t≦5 sec. 180°C/W when mounted on min. copper pad. http://www.SeCoSGmbH.com/ 03-Jan-2012 Rev. G Any changes of specification will not be informed individually. Page 3 of 7 SST3585 Elektronische Bauelemente 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET CHARACTERISTICS CURVE (N-Channel) http://www.SeCoSGmbH.com/ 03-Jan-2012 Rev. G Any changes of specification will not be informed individually. Page 4 of 7 SST3585 Elektronische Bauelemente 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET CHARACTERISTICS CURVE (N-Channel) http://www.SeCoSGmbH.com/ 03-Jan-2012 Rev. G Any changes of specification will not be informed individually. Page 5 of 7 SST3585 Elektronische Bauelemente 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET CHARACTERISTICS CURVE (P-Channel) http://www.SeCoSGmbH.com/ 03-Jan-2012 Rev. G Any changes of specification will not be informed individually. Page 6 of 7 SST3585 Elektronische Bauelemente 3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET CHARACTERISTICS CURVE (P-Channel) http://www.SeCoSGmbH.com/ 03-Jan-2012 Rev. G Any changes of specification will not be informed individually. Page 7 of 7