SECOS UMD6N

UMD6N
Dual NPN+PNP Digital Transistors
(Built-in Resistors)
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES



SOT-363
DTA143T(PNP) and DTC143T(NPN) transistors
are built-in a package.
Transistor elements are independent, eliminating
interference.
Mounting cost and area can be cut in half.
A
E
L
B
EQUIVALENT CIRCUIT

F
C
REF.
A
B
C
D
E
F
MARKING：D6
H
J
K
DG
Millimeter
Min.
Max.
2.00
2.20
2.15
2.45
1.15
1.35
0.90
1.10
1.20
1.40
0.15
0.35
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.15
8°
0.650 TYP.
ABSOLUTE MAXIMUM RATINGS at Ta = 25°C
Parameter
Symbol
Value
Unit
Collector-base voltage
V(BR)CBO
50
V
Collector-emitter voltage
V(BR)CEO
50
V
Emitter-base voltage
V(BR)EBO
5
V
Collector current
IC
100
mA
Collector Power dissipation
PC
150
mW
TJ, TSTG
150, -55 ~ 150
℃
Junction & Storage temperature
ABSOLUTE MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS at Ta = 25°C
Symbol
Min.
Typ.
Max.
Collector-base breakdown voltage
V(BR)CBO
50
-
-
Collector-emitter breakdown voltage
V(BR)CEO
50
-
-
Emitter-base breakdown voltage
V(BR)EBO
5
-
-
V
IE= 50A
ICBO
-
-
0.5
A
VCB= 50V
IEBO
-
-
0.5
A
VEB= 4V
VCE(sat)
-
-
0.3
V
IC= 5mA, IB= 0.25mA
Parameter
Collector cut-off current
Emitter cut-off current
Collector-emitter saturation voltage
Unit
V
DC current transfer ratio
hFE
100
-
600
Input resistance
R1
3.29
4.7
6.11
K
Transition frequency
fT
-
250
-
MHz
http://www.SeCoSGmbH.com/
30-Jun-2010 Rev. A
Test Conditions
IC= 50A
IC= 1mA
VCE= 5V, IC= 1mA
VCE= 10V, IE= -5mA,
f=100MHz
Any changes of specification will not be informed individually.
Page 1 of 2
UMD6N
Elektronische Bauelemente
Dual NPN+PNP Digital Transistors
(Built-in Resistors)
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
30-Jun-2010 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2