SECOS 2SA1179

2SA1179
-0.15A , -55V
PNP Silicon Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
 High breakdown voltage
A
L
3
3
C B
Top View
1
MARKING
1
K
Product
Marking Code
2SA1179
M
2
E
2
D
F
G
PACKAGE INFORMATION
REF.
Package
MPQ
LeaderSize
SOT-23
3K
7’ inch
A
B
C
D
E
F
Millimeter
Min.
Max.
2.80
3.00
2.25
2.55
1.20
1.40
0.90
1.15
1.80
2.00
0.30
0.50
H
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.10 REF.
0.55 REF.
0.08
0.15
0.5 REF.
0.95 TYP.
Collector


Base

Emitter
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Ratings
Unit
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
-55
-50
-5
-150
200
150, -55~150
V
V
V
mA
mW
°C
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown
Emitter to Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
-55
-50
-5
-
-
-0.1
-0.1
V
V
V
A
A
DC Current Gain
Test Conditions
IC= -10A, IE=0
IC= -1mA, IB=0
IE= -10A, IC=0
VCB= -35V, IE=0
VEB= -4V, IC=0
hFE
200
-
400
Collector to Emitter
Saturation Voltage
VCE(sat)
-
-
-0.5
V
IC= -50mA, IB= -5mA
Base to Emitter Saturation Voltage
VBE(sat)
-
-
-1.0
V
IC= -50mA, IB= -5mA
fT
Cob
-
180
4
-
MHz
pF
Transition Frequency
Collector Output Capacitance
http://www.SeCoSGmbH.com/
28-Jan-2011 Rev. B
VCE= -6V, IC= -1mA
VCE= -6V, IC= -10mA
VCB= -6V, IE=0, f=1MHz
Any changes of specification will not be informed individually.
Page 1 of 2
2SA1179
Elektronische Bauelemente
-0.15A , -55V
PNP Silicon Plastic Encapsulated Transistor
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
28-Jan-2011 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 2