2N3439CSM4 2N3440CSM4 SEME LAB HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) FEATURES 1.40 ± 0.15 (0.055 ± 0.006) 5.59 ± 0.13 (0.22 ± 0.005) • SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.23 rad. (0.009) 3 2 4 1 1.27 ± 0.05 (0.05 ± 0.002) 0.64 ± 0.08 (0.025 ± 0.003) 3.81 ± 0.13 (0.15 ± 0.005) 0.25 ± 0.03 (0.01 ± 0.001) • HERMETIC CERAMIC SURFACE MOUNT PACKAGE 0.23 min. (0.009) • CECC SCREENING OPTIONS • SPACE QUALITY LEVELS OPTIONS 2.03 ± 0.20 (0.08 ± 0.008) 1.02 ± 0.20 (0.04 ± 0.008) • HIGH VOLTAGE LCC3 PACKAGE Underside View PAD 1 – Collector PAD 3 – Emitter PAD 2 – N/C PAD 4 – Base APPLICATIONS: Hermetically sealed surface mount version of the popular 2N3439 & 2N3440 for high reliability / space applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VCBO VCEO VEBO IC PD PD Rja Tstg Collector – Base Voltage Collector – Emitter Voltage (IB = 0) Emitter – Base Voltage (IB = 0) Collector Current Total Device Dissipation Derate above 50°C Thermal Resistance Junction to Ambient Storage Temperature 2N3439 450V 350V 2N3440 300V 250V 7V 500mA 350mW 2.0mW / °C 350°C/W –55 to 200°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 2703 Issue 1 2N3439CSM4 2N3440CSM4 SEME LAB ELECTRICAL CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter VCEO(sus)* Test Conditions Min. Typ. Max. Unit Collector – Emitter Sustaining Voltage IC = 50mA 2N3439 350 (IB = 0) IC = 50mA 2N3440 250 Collector Cut-off Current VCE = 300V 2N3439 20 (IB = 0) VCE = 200V 2N3440 50 Collector Cut-off Current VCE = 450V 2N3439 500 (VBE = -1.5V) VCE = 300V 2N3440 500 Collector – Base Cut-off Current VCB = 350V 2N3439 20 (IE = 0) VCB = 250V 2N3440 20 IEBO Emitter Cut-off Current (IC = 0) VEB = 6V VCE(sat)* Collector – Emitter Saturation Voltage IC = 50mA VBE(sat)* Base – Emitter Saturation Voltage IC = 50mA ICEO ICEX ICBO IC = 2mA VCE = 10V A µA µA µA IB = 4mA 0.5 V IB = 4mA 1.3 V 160 — 40 VCE = 10V DC Current Gain m 20 IC = 20mA hFE* V 2N3439 only 30 — * Pulse test tp = 300ms , d £ 2% DYNAMIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Parameter Test Conditions fT Transition Frequency IC = 10mA Cob Output Capacitance VCB = 10V hfe Small Signal Current Gain IC = 5mA VCE = 10V f = 5MHz Min. f = 1kHz Max. Unit 15 MHz 10 f = 1MHz VCE = 10V Typ. 25 pF — Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 2703 Issue 1