2N6796 MECHANICAL DATA Dimensions in mm (inches) TMOS FET ENHANCEMENT N - CHANNEL 8.64 (0.34) 9.40 (0.37) 8.01 (0.315) 9.01 (0.355) 4.06 (0.16) 4.57 (0.18) 12.70 (0.500) min. 0.89 max. (0.035) FEATURES 0.41 (0.016) 0.53 (0.021) dia. • V(BR)DSS = 100V 5.08 (0.200) typ. • ID = 8A 2.54 (0.100) 2 1 3 Ω • RDSON = 0.18Ω 0.74 (0.029) 1.14 (0.045) 0.71 (0.028) 0.53 (0.021) 45° TO–39 PACKAGE (TO-205AF) Underside View PIN 1 – Source PIN 2 – Gate PIN 3 – Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDS Drain–Source Voltage VDGR Drain–Source Voltage (RGS = 1.0 mΩ) VGS Gate–Source Voltage ID Drain Current Continuous TCase = 25°C IDM Drain Current Pulsed PD Total Device Dissipation @ TCase = 25°C Derate above 25°C TJ , TSTG Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS RθJC Thermal Resistance Junction to Case RθJA Thermal Resistance Junction to Ambient TL Maximum Lead Temperature 1.6mm from Case for 10 secs. 100V 100V ±20V 8.0A 32A 25W 0.2W/°C –55 to +150°C 5.0°C/W 175°C/W 300°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3095 Issue 1 2N6796 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated) Parameter V(BR)DSS Test Conditions Drain–Source Breakdown Voltage Voltage1 VGS(th) Gate Thresshold IGSS Gate–Body Leakage IDSS Zero Gate Voltage Drain Current rDS(on) Drain–Source On–Resistance1 V DS(on) Drain–Source On–Voltage1 Transconductance1 gfs Ciss Forward Coss Output capacitance Crss Reverse Transfer Capacitance Input Capacitance td(on) Turn–On Delay tr RiseTime1 td(off) Turn off Delay tf FallTime1 Time1 Time1 Min. VGS = 0 ID = 0.25mA 100 VDS=VGS ID = 0.5mA 2.0 VDS = 0 VGS = ±20V Typ. Max. Unit 4.0 ±100 VDS = Rated VDSS 250 1000 VGS = 10V Tj = 125°C ID = 5.0A 0.35 VGS = 10V TA = 125°C ID = 8.0A VGS = 15V ID = 5.0A VDS = 25V VGS = 0 VGS = 0V f = 1.0MHZ VDD = 30V RGEN = 50Ω 0.18 1.56 3.0 9.0 350 900 150 500 50 150 V nA µA Ω V Ω s( ) pF 30 ID = 5.0A 75 RG = 7.5 ohms 40 ns 45 SOURCE DRAIN DIODE RATING CHARACTERISTICS VSD ton trr Diode Forward Voltage1 Forward Turn OnTime1 Reverse Recovery IS = Rated ID(on) VGS = 0 Time1 5.5 V Negligible 300 ns 1) Pulse test : Pulse Width < 300µs ,Duty Cycle < 2% 2) Pulse width limited by maximum juction temperature Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: [email protected] Website: http://www.semelab.co.uk Document Number 3095 Issue 1