MCL80G SILICON EPITAXIAL PLANAR DIODE LS-31 Features • High speed • High reliability • Fits onto SOD 323 / SOT 23 footprints • Micro Melf package Applications Ultra high speed switching Absolute Maximum Ratings (Ta = 25OC) Parameter Symbol Value Unit Peak Reverse Voltage VRM 80 V DC Reverse Voltage VR 80 V Peak Forward Current IFM 300 mA Mean Rectifying Current IO 100 mA Surge Current(1μS) Isurge 4 A Power Dissipation Ptot 200 mW Junction Temperature Tj 150 O Storage Temperature Range Ts -55 … +150 O C C SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 09/04/2003 MCL80G Characteristics at Ta = 25 OC Parameter Test Conditions Symbol Min Typ Max Unit Forward Voltage IF = 100mA VF - - 1.2 V Reverse Current VR = 70V IR - - 0.1 μA Diode Capacitance VR = 6V, f = 1MHZ CD - - 3.5 pF Reverse Recovery Time IF = 5mA, VR = 6V trr - - 4 ns SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 09/04/2003 MCL80G 1000 50 125 Ta=100 oC 20 100 100 Ta=85 C 75 50 25 0 25 50 75 10 50 C REVERSE CURRENT, nA Forward Current-mA Power Dissipation - Pd/Pd max(%) REVERSE CHARACTERISTICS Forward Characteristics Power Attenuation Curve 25 C 5 0 C -30 C 2 1 0.5 0.2 100 125 150 Ta-Ambient Temperature- oC 0.1 0 -0.2 -0.4 -0.6 -0.8 -1 -1.2 -1.4 -1.6 75 oC 50 oC 10 25 oC 0 oC 1 -25 oC 0.1 0.01 0 Forward Voltage-V 10 20 30 50 40 REVERSE VOLTAGE,V Reverse Recovery Time Capacitance 0.01 F DUT Reverse Recovery Time (ns) Capacitance (pF) 2 PULSE GENERATOR OUTPUT 50 50 VR =6V f=1MHz 4 5 10 SAMPLING OSCILLOSCOPE 8 6 INPUT 4 2 100ns 0 4 8 12 16 Reverse Voltage ( V ) 20 0 2 4 6 8 10 Forward Current ( mA ) OUTPUT trr 0 0.1 IR IR SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated : 09/04/2003