RB521G-30 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE for rectifying small power application PINNING DESCRIPTION PIN 1 Cathode 2 Anode 2 1 E Top View Marking Code: "E" Simplified outline SOD-523 and symbol Absolute Maximum Ratings (Ta = 25 OC) Parameter Symbol Value Unit Reverse Voltage VR 30 V Average Rectified Forward Current IO 100 mA IFSM 1 A Junction Temperature Tj 125 O Storage Temperature Range Ts - 40 to + 125 O Symbol Max. Unit Forward Voltage at IF = 10 mA VF 0.35 V Reverse Current at VR = 10 V IR 10 µA Peak Forward Surge Current (60 Hz for 1 cyc.) C C Characteristics at Ta = 25 OC Parameter Note: Please pay attention to static electricity when handling. SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006 RB521G-30 PACKAGE OUTLINE Plastic surface mounted package; 2 leads SOD-523 ALL ROUND C A ∠ HE D E bp A UNIT A bp C D E HE V mm 0.70 0.60 0.4 0.3 0.135 0.127 1.25 1.15 0.85 0.75 1.7 1.5 0.1 ∠ 5 O SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 23/11/2006