TESDQ5V0 Bi-directional ESD Protection Diode 0 Small Signal Diode DFN1006(0402) Features Meet IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) Meet IEC61000-4-4 (EFT) rating. 40A (5/50ήs) 100W Peak Pulse Power per Line (tp=8/20μs) Protects one birectional I/O line Working Voltage : 5V Pb free version, RoHS compliant, and Halogen free Mechanical Data Unit (mm) Dimensions Case : DFN1006(0402) 1.0mm x 0.6mm x 0.5mm package, molded plastic Molding Compound Flammability Ratting: UL94V-0 Unit (inch) Min Max Min Min Max Min Max Max Terminal: Gold plated,solder per MIL-STD-750, Method 2026 guaranteed A 0.950 1.050 0.037 0.041 B 0.550 0.650 0.022 0.026 High temperature soldering guaranteed: 260°C/10s C 0.450 0.550 0.018 0.022 Mounting position: Any D 0.275 0.325 0.011 0.013 Weight :0.5 mg (approximately) E 0.275 0.325 0.011 0.013 Marking Code : M Applications Pin Configutation Cell Phone Handsets and Accessories Notebooks, Desktops, and Servers Keypads, Side Keys, LCD Displays Portable Instrumentation Touch panel Suggested PAD Layout Ordering Information Part No. Package TESDQ5V0 RJG DFN1006 (0402) Packing Marking 5K / 7" Reel M Dimensions Value (in mm) Maximum Ratings and Electrical Characteristics X 0.354 Rating at 25°C ambient temperature unless otherwise specified. X1 1.110 Y 0.354 Maximum Ratings Symbol Value Units Peak Pulse Power (tp=8/20μs waveform) PPP 100 W ESD per IEC 61000-4-2 (Air) ESD per IEC 61000-4-2 (Contact) VESD ±15 ±8 KV Type Number TJ, TSTG Junction and Storage Temperature Range . -55 to + 150 . °C Electrical Characteristics Type Number Stand-Off Voltage Reverse Breakdown Voltage Reverse Leakage Current Clamping Voltage Junction Capacitance Symbol VWM IR= 1mA VR= 5V IPP= 1A IPP= 2A VR=0V, f=1.0MHz V(BR) IR Vc CJ Min 6 10 (Typ.) Max 5 Units V 1 12.5 20 V uA V pF Notes: The suggested land pattern dimensions have seen provided for reference only,as actual pad layouts may vary despending on application. Version : B10 TESDQ5V0 Bi-directional ESD Protection Diode Small Signal Diode Rating and Characteristic Curves FIG 1 Admissible Power Derating Curve FIG 2 Pulse Waveform 110 120 100 Waveform Parameters: tr = 8μs, td = 20μs 90 Percent of IPP Power Rating (%) 100 80 60 80 70 e-1 60 50 40 40 td=Ipp/2 30 20 20 10 0 0 0 20 40 60 80 100 120 140 160 0 180 5 FIG 3 Max. Clamping Voltage vs. Peak Pulse 15 20 25 30 FIG 4 Typical Junction Capacitance 25 15 Normalized Capacitance(pF) Clamping Voltage - Vc(V) 10 Time (us) Ambient Tempeatature ( oC) 20 10 15 10 Waveform Parameters: tr = 8μs, td = 20μs 5 5 f = 1.0MHz 0 0 1 2 3 4 5 0 0 1 Peak Pulse Current - Ipp (A) 2 3 4 5 Reverse Voltage (V) Applications Information Designed to protect one data, I/O, or power supply line. Designed to protect sensitive electronics from damage or latch-up due to ESD Designed to replace multilayer varistors (MLVs) in portable applications Features large crosssectional area junctions for conducting high transient currents Offers superior electrical characteristics such as lower clamping voltage and no device degradation when compared to MLVs The combination of small size and high ESD surge capability makes them ideal for use in portable applications. Circuit Board Layout Recommendations Good circuit board layout is critical for the suppression of ESD induced transients. Place the ESD Protection Diode near the input terminals or connectors to restrict transient Minimize the path length between the ESD Protection Diode and the protected line. Minimize all conductive loops including power and ground loops. The ESD transient return path to ground should be kept as short as possible. Never run critical signals near board edges. Use ground planes whenever possible. Version : B10 TESDQ5V0 Bi-directional ESD Protection Diode Small Signal Diode Carrier & Reel specification TSC label Item Top Cover Tape Carieer Tape Any Additional Label (If Required) Symbol Dimension(mm) Carrier depth K 1.2 Max. Sprocket hole D 1.50 +0.10 Reel outside diameter A 178 ± 1 Reel inner diameter D1 50 Min. Feed hole width D2 13.0 ± 0.5 Sprocke hole position E 1.75 ±0.10 Sprocke hole pitch P0 4.00 ±0.10 Embossment center P1 2.00 ±0.10 Overall tape thickness T 0.6 Max. Tape width W 8.30 Max. Reel width W1 14.4 Max. W1 D D2 D1 Direction of Feed Note 1: A0, B0, and K0 are determined by component size. The clearance between the components and the cavity must be within 0.05 mm min. to 0.1 mm max. The component cannot rote more than 10o within the determined cavity. Note 2: If B1 exceeds 4.2 mm(0.165'') for 8 mm embossed tape, the tape may not feed through all tape feeders. Version : B10