UTC-IC X1049AG-T92-R

UNISONIC TECHNOLOGIES CO., LTD
X1049A
NPN SILICON TRANSISTOR
HIGH GAIN TRANSISTOR
„
FEATURES
* VCEV = 80V
* High Gain
* 20 Amps pulse current
1
TO-92
„
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
X1049AL-T92-B
X1049AG-T92-B
X1049AL-T92-K
X1049AG-T92-K
X1049AL-T92-R
X1049AG-T92-R
www.unisonic.com.tw
Copyright © 2012 Unisonic Technologies Co., Ltd
Package
TO-92
TO-92
TO-92
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
Packing
Tape Box
Bulk
Tape Reel
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X1049A
„
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25℃)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
RATINGS
UNIT
80
V
25
V
5
V
DC
4
A
Collector Current
IC
Pulse
20
A
Base Current
IB
500
mA
Power Dissipation
PD
1
W
℃
Junction Temperature
TJ
125
℃
Operating Temperature
TOPR
-20 ~ +85
℃
Storage Temperature
TSTG
-40 ~ +150
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
„
SYMBOL
VCBO
VCEO
VEBO
ELECTRICAL CHARACTERISTICS (TA=25℃ unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
SYMBOL
VCBO
VCEO
VCES
VCEV
VEBO
ICBO
IEBO
ICES
TEST CONDITIONS
IC=100μA
IC=10mA
IC=100μA
IC=100μA, VEB=1V
IE=100μA
VCB=50V
VEB=4V
VCES=50V
IC=0.5A, IB=10mA
IC=1A, IB=10mA
Collector-Emitter Saturation Voltage
VCE(SAT)
(Note)
IC=2A, IB=10mA
IC=4A, IB=50mA
Base-Emitter Saturation Voltage (Note) VBE(SAT) IC=4A, IB=50mA
Base-Emitter Turn-On Voltage (Note)
VBE(ON) IC=4A, VCE=2V
IC=10mA, VCE=2V
IC=0.5A, VCE=2V
DC Current Gain (Note)
hFE
IC=1A, VCE=2V
IC=4A, VCE=2V
IC=20A, VCE=2V
Transition Frequency
fT
IC=50mA, VCE=10V, f=50MHz
Output Capacitance
COBO VCB=10V, f=1MHz
Turn-On Time
tON
IC=4A, IB=40mA, VCC=10V
Turn-Off Time
tOFF
IC=4A, IB=±40mA, VCC=10V
Note: Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤2%
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
80
25
80
80
5
250
300
300
200
7
TYP
120
35
120
120
8.75
0.3
0.3
0.3
30
60
125
155
890
820
430
450
450
350
180
45
125
380
MAX
10
10
10
70
130
280
400
980
920
UNIT
V
V
V
V
V
nA
nA
nA
mV
mV
mV
1200
60
MHz
pF
ns
ns
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NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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„
NPN SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Power Dissipation vs. Ambient Temperature
Transient Thermal Resistance
180
160
D=1(D,C)
140
1.0
0.75
120
100
D=0.5
0.50
80
60
40
D=0.2
0.25
D=0.1
D=0.05
20
Single Pulse
0
0.1ms 1ms 10ms 100ms 1s 10s 100s
Pulse Width
0.00
-40
0
40
80 120 160
Ambient Temperature ( ℃ )
200
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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