CHENMKO CHDTC623TKPT

CHENMKO ENTERPRISE CO.,LTD
CHDTC623TKPT
SURFACE MOUNT
NPN Digital Silicon Transistor
VOLTAGE 20 Volts
CURRENT 600 mAmpere
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
FEATURE
SOT-23
Emitter
Base
2
(3)
(2)
.103 (2.64)
.086 (2.20)
.028 (0.70)
.020 (0.50)
.007 (0.177)
.055 (1.40)
.047 (1.20)
MARKING
CIRCUIT
.066 (1.70)
CONSTRUCTION
* One NPN transistors and bias of thin-film resistors in one
package.
.110 (2.80)
.082 (2.10)
.119 (3.04)
(1)
.045 (1.15)
.033 (0.85)
1
.002 (0.05)
ideal for muting circuits.
* These transistors can be used at high current levels,IC=600mA
* Internal isolated NPN transistors in one package.
* Built in single resistor(R1=2.2kΩ, Typ. )
.019 (0.50)
.041 (1.05)
.033 (0.85)
VCE(sat)=40mV at IC/IB=50mA/2.5mA,makes these transistors
.018 (0.30)
* Small surface mounting type. (SOT-23)
* In addition to the features of regular digital transistor.
TR
R1
SOT-23
3
Collector
Dimensions in inches and (millimeters)
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
VALUE
CONDITIONS
UNIT
VCBO
Coll ector -Base voltage
20
V
VCEO
Collector-Emitter voltage
20
V
VEBO
Emitter-Base voltage
12
V
IC(Max.)
Coll ector current
600
mA
PD
Power dissipation
200
mW
TSTG
Storage temperature
−55 ∼ +150
TJ
Junction temperature
−55 ∼ +150
Tamb ≤ 25 OC, Note 1
O
O
C
C
Note
1. Transistor mounted on an FR4 printed-circuit board.
2005-09
RATING CHARACTERISTIC ( CHDTC623TUPT )
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
20
−
−
V
20
−
−
V
IE=50uA
12
−
−
V
Collector cutoff current
VCB=20V
−
−
0.5
uA
Emitter cutoff current
VEB=12V
−
−
0.5
uA
VCE(sat)
Collector-emitter saturation voltage
IC/IB=50mA/2.5mA
−
40
150
mV
hFE
DC current gain
IC=50mA; VCE=5.0V
820
−
2700
R1
fT
Input resistor
Transition frequency
1.54
RON
Output "ON" resistance
BVCBO
Collector-base breakdown voltage
BVCEO
Collector-emitter breakdown voltage IC=1.0mA
BVEBO
Emitter-base breakdown voltage
ICBO
IEBO
Note
1.Pulse test: tp≤300uS; δ≤0.02.
IC=50uA
2.2
2.86
KΩ
−
150
−
MHz
VI=5V,RL=1KΩ ,f=1KHZ −
0.4
−
Ω
IE=-50mA, VCE=10.0V
f=100MHz
RATING CHARACTERISTIC CURVES ( CHDTC623TUPT )
Typical Electrical Characteristics
Ta=100°C
Ta=25°C
Ta= −40°C
1000
100
0.1
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
ON RESISTANCE : Ron (Ω)
1000
Ta=25°C
f=1kHz
RL=1kΩ
hFE=1500 (5V / 50mA)
100
10
1
1
10
IC / IB=20
1000
100
Ta=100°C
Ta=25°C
Ta= −40°C
10
1
0.1
1
10
100
1000
COLLECTOR CURRENT : IC (mA)
Fig.2 Collector-Emitter Saturation
Voltage vs. Collector Current
Fig.1 DC Current Gain vs.
Collector Current
0.1
0.1
10000
VCE=5V
COLLECTOR SATURATION
VOLTAGE : VCE (sat) (mV)
DC CURRENT GAIN : hFE
10000
100
INPUT VOLTAGE : VI (V)
Fig.3 "ON" resistance vs. Input Voltage