COMCHIP SMD Super Fast Reco ver y Rect ifier s SMD Diodes Specialist CSFA101-G Thru. CSFA105-G Reverse Voltage: 50 to 600 Volts Forward Current: 1.0 Amp RoHS Device Features DO-214AC (SMA) -Ideal for surface mount applications. -Easy pick and place. 0.180(4.57) 0.160(4.06) -Plastic package has Underwriters Lab. flammability classification 94V-0. 0.110(2.79) 0.086(2.18) 0.067(1.70) 0.051(1.29) -Super fast recovery time 35nS. -Built-in strain relief. -Low forward voltage drop. 0.209(5.31) 0.185(4.70) Mechanical data -Case: JEDEC DO-214AC, molded plastic. 0.012(0.31) 0.006(0.15) 0.091(2.31) 0.067(1.70) -Terminals: solderable per MIL-STD-750, method 2026. 0.059(1.50) 0.035(0.89) 0.008(0.20) 0.004(0.10) -Polarity: Color band denotes cathode end. -Approx. weight: 0.063 grams Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characteristics Parameter Symbol CSFA101-G CSFA102-G CSFA103-G CSFA104-G CSFA105-G Units Max. repetitive peak reverse voltage V RRM 50 100 200 400 600 V Max. DC blocking voltage V DC 50 100 200 400 600 V Max. RMS voltage V RMS 35 70 140 280 420 V Peak surge forward current, 8.3ms single half sine-wave superimposed on rate load (JEDEC method) I FSM 30 A Max. average forward current IO 1.0 A Max. instantaneous forward voltage at 1.0A VF Reverse recovery time T rr 35 nS Max. DC reverse current at T A =25 OC rated DC blocking voltage T A =100 OC IR 5.0 100 μA RθJL 35 TJ 150 O C T STG -55 to +150 O C Max. thermal resistance (Note 1) Max. operating junction temperature Storage temperature 0.95 1.25 V 1.5 O C/W Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0×8.0 mm 2 copper pad area. REV:A Page 1 QW-BS001 Comchip Technology CO., LTD. COMCHIP SMD Super Fast Reco ver y Rect ifier s SMD Diodes Specialist RATING AND CHARACTERISTIC CURVES (CSFA101-G thru CSFA105-G) Fig.1 Reverse Characteristics Fig.2 Forward Characteristics 1000 10 CSFA101-G~103-G O F o r w a rd C u rren t (A) Rever s e C urr e n t (μA ) T J =125 C 100 T J =75 OC 10 1 1 CSFA104-G 0.1 CSFA105-G 0.01 T J =25 OC O T J =25 C Pulse width 300μS 4% duty cycle 0.1 0.001 0 20 40 60 80 100 120 0 140 Fig.3 Junction Capacitance 0.4 0.6 1.0 0.8 1.2 1.4 Fig.4 Non-repetitive Forward Surge Current 14 Peak Forward Surge Current ( A) 30 12 J u n c ti o n C apaci t ance (p F ) 0.2 Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) 10 8 6 4 O T J =25 C f=1MHz Vsig=50mVp-p 2 T J =25 OC 8.3ms single half sine wave, JEDEC method 25 20 15 10 5 0 0 0.1 1 10 100 1 10 100 Number of Cycles at 60Hz Reverse Voltage (V) Fig.6 Current Derating Curve Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics 1.4 trr 10Ω NONINDUCTIVE Average Forward Current (A) 50Ω NONINDUCTIVE +0.5A (+) 25Vdc (approx.) (-) (-) D.U.T. 1Ω NONINDUCTIVE PULSE GENERATOR (NOTE 2) 0 -0.25A (+) OSCILLLISCOPE (NOTE 1) NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF. 2. Rise time=10ns max., input impedance=50Ω. -1.0A 1.2 1.0 0.8 0.6 Single phase Half wave 60Hz 0.4 0.2 0 0 1cm Set time base for 50 / 10nS / cm 25 50 75 100 125 150 175 Ambient Temperature ( OC) REV:A Page 2 QW-BS001 Comchip Technology CO., LTD.