SMD Efficient Fast Recovery Rectifier CEFM101-G Thru CEFM105-G (RoHS Device) Reverse Voltage: 50 ~ 600 Volts Forward Current: 1.0 Amp Features: Ideal for surface mount applications Easy pick and place MINI SMA Plastic package has Underwriters Lab. 0.161 (4.10) 0.146 (3.70) flammability classification 94V-0. 0.012 (0.30) Typ. Built-in strain relief 0.071 (1.80) 0.055 (1.40) Super fast recovery time for high efficient Low forward voltage drop 0.110 (2.80) 0.094 (2.40) Mechanical Data: Case: Mini-SMA/SOD-123 molded plastic Terminals: solderable per MIL-STD-750, method 2026 Polarity: Color band denotes cathode end Mounting position: Any Approx. Weight: 0.04 gram 0.063 (1.60) 0.055 (1.40) 0.035 (0.90) Typ. 0.035 (0.90) Typ. Dimensions in inches and (millimeter) Maximum Ratings and Electrical Characterics: Parameter Symbol CEFM101-G VRRM 50 100 200 400 600 V Max. DC Blocking Voltage VDC 50 100 200 400 600 V Max. RMS Voltage VRMS 35 70 140 280 420 V Peak Surge Forward Current 8.3ms single half sine-wave superimposed on rate load (JEDEC method) IFSM 30 A Max. Average Forward Current Io 1.0 A Max. Instantaneous Forward Voltage at 1.0A VF 0.875 1.1 1.25 V Reverse recovery time Trr 25 35 50 nS Max. DC Reverse Current at Rated DC Blocking Voltage Ta=25oC Ta=100oC IR Max. Repetitive Peak Reverse Voltage Max. Thermal Resistance (Note1) Max. Operating Junction Temperature Storage Temperature R CEFM102-G CEFM103-G CEFM104-G CEFM105-G 5.0 250 42 JL Unit uA o C/W Tj -55 to +155 o C TSTG -55 to +150 o C Note1: Thermal resistance from junction to lead P.C.B. Mounted on 8.0x8.0 mm copper pad areas. “-G” suffix designates RoHS compliant Version www.comchiptech.com Page1 SMD Efficient Fast Recovery Rectifier Rating and Characteristic Curves (CEFM101-G thru CEFM105-G) Fig.2 - Forward Characteristics Fig. 1 - Reverse Characteristics 100 10 CEFM101-G-103-G Forward Current (A) Reverse current (uA) Tj=125 C 10 Tj=75 C 1.0 Tj=25 C 0.1 CEFM104-G 1.0 0.1 CEFM105-G 0.01 Tj=25 C Pulse width 300uS 4% duty cycle 0. 01 0 0.001 15 30 45 60 75 90 105 120 135 150 0 0.2 0.4 Percent of Rated Peak Reverse Voltage (%) Forward Voltage (V) Fig. 3 - Junction Capacitance Fig.4 - Non Repetitive Forward Surge Curre 35 50 Tj=25 C 25 20 CEFM101-103 15 10 8.3mS Single Half Sine Wave JEDEC methode Peak Surge Forward Current (A) f=1MHz and applied 4VDC reverse voltage 30 Junction Capacitance (pF) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 CEFM104-105 5 40 30 Tj=25 C 20 10 0 0 0.01 0.1 1.0 10 100 1 Reverse Voltage (V) 5 10 50 1 00 Number of Cycles at 60Hz Fig. 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics Fig. 6 - Current Derating Curve 1.4 trr 10 NONINDUCTIVE | | | | | | | | +0.5A ( ) (+) 25Vdc (approx.) D.U.T. PULSE GENERATOR (NOTE 2) ( ) 1 NONINDUCTIVE Average Forward Current ( A ) 50 NONINDUCTIVE 0 -0.25A (+) OSCILLISCOPE (NOTE 1) NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. -1.0A 1.2 1.0 0.8 0.6 0.4 Single Phase Half Wave 60Hz 0.2 00 25 50 75 100 125 150 175 1cm SET TIME BASE FOR Ambient Temperature ( C) 50 / 10ns / cm “-G” suffix designates RoHS compliant Version www.comchiptech.com Page2