COMCHIP MMBT3906-HF

General Purpose Transistor
SMD Diodes Specialist
MMBT3906-HF
(PNP)
RoHS Device
Features
-Halogen Free
-Epitaxial planar die construction
SOT-23
0.119 (3.00)
0.110 (2.80)
-As complementary type, the NPN
3
transistor MMBT3906-HF is recommended
0.056 (1.40)
0.047 (1.20)
1
2
0.083 (2.10)
0.066 (1.70)
Collector
3
0.103 (2.60)
0.086 (2.20)
0.044 (1.10)
0.035 (0.90)
1
Base
0.006 (0.15)
0.002 (0.05)
0.006 (0.15) max
0.020 (0.50)
0.013 (0.35)
2
Emitter
Maximum Ratings(at TA=25
0.007 (0.20) min
Dimensions in inches and (millimeter)
O
C unless otherwise noted)
Symbol
Typ
Max
Unit
VCBO
-40
V
Collector-Emitter voltage
VCEO
-40
V
Emitter-Base voltage
Parameter
Collector-Base voltage
Min
VEBO
-5
V
Collector current-Continuous
IC
-0.2
A
Collector dissipatioin
PC
0.3
W
+150
°C
Max
Unit
Storage temperature and junction temperature
TSTG , TJ
Electrical Characteristics (at TA=25
Parameter
-55
O
C unless otherwise noted)
Conditions
Symbol
Min
Collector-Base breakdown voltage
IC =-100μA , IE=0
V(BR)CBO
-40
V
Collector-Emitter breakdown voltage
IC =-1mA , IB=0
V(BR)CEO
-40
V
Emitter-Base breakdown voltage
IE =-100μA , IC=0
V(BR)EBO
-5
V
Collector cut-off current
VCB=-40V , IE=0
ICBO
-0.1
µA
Collector cut-off current
VCE=-40V , IB=0
ICEO
-0.1
µA
Emitter cut-off current
VEB=-5V , IC=0
IEBO
-0.1
µA
VCE=-1V , IC=-10mA
hFE(1)
100
VCE=-1V , IC=-50mA
hFE(2)
60
Collector-Emitter saturation voltage
IC=-50mA , IB=-5mA
VCE(sat)
-0.3
V
Base-Emitter saturation voltage
IC=-50mA , IB=-5mA
VBE(sat)
-0.95
V
DC current gain
Transition frequency
VCE=-20V , IC=-10mA
f=100MHZ
fT
300
250
Mhz
Delay time
VCC=-3.0V , VBE=-0.5V
td
35
nS
Rise time
IC=-10mA , IB1=-1.0mA
tr
35
nS
Storage time
VCC=-3.0Vdc , IC=-10mA
ts
225
nS
Fall time
IB1=IB2=-1.0mA
tf
75
nS
REV:A
QW-HTR01
Page 1
General Purpose Transistor
SMD Diodes Specialist
RATING AND CHARACTERISTIC CURVES (MMBT3906-HF)
Fig. 2 - Charg data
Fig.1 Capacitance
10
5000
VCC=40V
IC/IB=10
Q, Charge (pC)
Capacitance (pF)
Cobo
5
Cibo
1000
QT
QA
100
1
0.1
10
1
50
40
10
1.0
200
100
Reverse bias (V)
Ic- Collector current (mA)
Fig. 3 - Turn-On Time
Fig. 4 - Fall time
500
500
VCC=40V
IB1=IB2
tf, Fall time (nS)
IC/IB=10
Time (nS)
100
[email protected]=3.0V
15V
100
IC/IBo=20
125
C
IC/IB=10
40V
10
10
2.0V
[email protected]=0V
5
5
1
100
10
1
200
Ic - Collector current (mA)
Figure 5
Figure 6
f=1.0kHz
Source resistance=200Ω
IC=1.0mA
4
Source resistance=200Ω
IC=0.5mA
3
Source resistance=2.0KΩ
IC=50µA
2
Source resistance=2.0KΩ
IC=100µA
1
IC=0.5mA
8
6
4
IC=50µA
IC=100µA
2
0
0.1
IC=1.0mA
10
NF, Noise Figure (dB)
NF, Noise figure (dB)
200
12
5
1
100
10
Ic - Collector current (mA)
10
Frequency (kHz)
100
0
0.1
1
10
100
Rg, Source resistance (KΩ)
REV:A
QW-HTR01
Page 2
General Purpose Transistor
SMD Diodes Specialist
o
h Parameters (VCE=-10Vdc, f=1.0kHz, TA=25C)
Fig. 8 - Output Admittance
Fig.7 Current gain
100
hoe, Output admittance (μmhos)
hfe, DC current gain
300
200
100
70
50
30
0.1
1.0
5.0
10
5
0.1
10
1.0
Ic- Collector current (mA)
Fig. 9- Input impedance
Fig. 10- Voltage feedback ratio
10
hre, Voltagefee dback ratio (x10-4)
10
1.0
0.2
1.0
0.5
0.1
10
1.0
0.1
Ic - Collector current (mA)
Fig.12-Temperature coefficients
Fig.11- “ON” voltages
o
ΘV, Temperature Coefficients (mV/C)
1.0
Tj=25Co
10
1.0
Ic - Collector current (mA)
VBE(sat)@ IC/IB=10
0.8
V, Voltage (Volts)
10
IC, Collector current (mA)
20
hie, lnput impedance (kΩ)
50
VBE@ VCE=1.0V
0.6
0.4
VCE(sat)@ IC/IB=10
0.2
1.0
0.5
VC
+25Co to +125C o
For VCE(sat)
0
o
o
-55C to +25C
-0.5
+25Co to +125C o
-1.0
o
o
-55C to +25C
VB
-1.5
For VBE(sat)
-2.0
0
1.0
10
IC, Collector current (mA)
100
200
0
20
40
60
80
100
120
140 160
180
200
IC, Collector current (mA)
REV:A
QW-HTR01
Page 3
General Purpose Transistor
SMD Diodes Specialist
Reel Taping Specification
d
P0
P1
T
E
Index hole
F
W
B
P
C
A
12
o
0
D2
D1 D
W1
Trailer
Device
.......
.......
End
.......
.......
Leader
.......
.......
.......
.......
10 pitches (min)
Start
10 pitches (min)
Direction of Feed
SOT-23
SOT-23
SYMBOL
A
B
C
d
D
D1
D2
(mm)
3.10 ± 0.10
2.85 ± 0.10
1.40 ± 0.10
1.55 ± 0.10
178 ± 1
50.0 MIN.
13.0 ± 0.20
(inch)
0.122 ± 0.004
0.112 ± 0.004
0.035 ± 0.004
0.061 ± 0.004
7.008 ± 0.040
1.969 MIN.
0.512 ± 0.008
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.05
8.00 ± 0.30
14.4 MAX.
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.002
0.315 ± 0.012
0.567 MAX
REV:A
Page 4
QW-HTR01
Comchip Technology CO., LTD.
General Purpose Transistor
SMD Diodes Specialist
Marking Code
3
Park Number
Marking Code
MMBT3906-HF
2A
2A
1
2
Suggested PAD Layout
SOT-23
SIZE
(mm)
(inch)
A
0.80
0.031
B
0.65
0.025
C
1.90
0.075
D
2.02
0.080
A
D
E
B
E
0.120
3.03
C
Standard Package
Qty per Reel
Reel Size
(Pcs)
(inch)
3000
7
Case Type
SOT-23
REV:A
Page 4
QW-HTR01
Comchip Technology CO., LTD.