CYSTEKEC MTDP4953Q8

CYStech Electronics Corp.
Spec. No. : C402Q8
Issued Date : 2006.06.15
Revised Date :2009.06.25
Page No. : 1/8
P-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTDP4953Q8
Description
The MTDP4953Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
• RDS(ON)[email protected]=-10V, ID=-5A
RDS(ON)[email protected]=-4.5V, ID=-4A
• Simple drive requirement
• Low on-resistance
• Fast switching speed
• Pb-free package
Applications
• Power management in notebook computer, portable equipment and battery powered systems.
Equivalent Circuit
MTDP4953Q8
Outline
SOP-8
G:Gate
S:Source
D:Drain
MTDP4953Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C402Q8
Issued Date : 2006.06.15
Revised Date :2009.06.25
Page No. : 2/8
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Breakdown Voltage
Gate-Source Voltage
Continuous Drain Current @TA=25 °C
Continuous Drain Current @TA=70 °C
Pulsed Drain Current (Note 2)
(Note 1)
(Note 1)
Total Power Dissipation (Note 1)
Linear Derating Factor
Operating Junction Temperature
Storage Temperature
Thermal Resistance, Junction-to-Ambient (Note 1)
Symbol
Limits
Unit
BVDSS
VGS
ID
ID
IDM
Pd
-30
±20
-5
-4
-20
2
0.02
-55~+150
-55~+150
62.5
V
V
A
A
A
W
W / °C
°C
°C
°C/W
Tj
Tstg
Rth,ja
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤10s.
2.Pulse width ≤300μs, duty cycle≤2%
Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static
BVDSS
-30
V
VGS=0, ID=-250μA
VGS(th)
-1
-2.5
V
VDS=VGS, ID=-250μA
IGSS
±100
nA
VGS=±20V, VDS=0
IDSS
-1
μA
VDS=-24V, VGS=0
60
ID=-5A, VGS=-10V
*RDS(ON)
mΩ
90
ID=-4A, VGS=-4.5V
*GFS
5
S
VDS=-5V, ID=-5A
Dynamic
Ciss
582
pF
VDS=-15V, VGS=0, f=1MHz
Coss
125
Crss
86
*td(ON)
9
VDS=-15V, ID=-1A,
*tr
10
ns
VGS=-10V, RG=6Ω, RD=15Ω
*td(OFF)
37
*tf
23
*Qg
11.7
VDS=-15V, ID=-5A,
nC
*Qgs
2.1
VGS=-10V,
*Qgd
2.9
Source-Drain Diode
*VSD
-0.84
-1.2
V
VGS=0V, IS=-1.7A
*Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2%
MTDP4953Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C402Q8
Issued Date : 2006.06.15
Revised Date :2009.06.25
Page No. : 3/8
Characteristic Curves
MTDP4953Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C402Q8
Issued Date : 2006.06.15
Revised Date :2009.06.25
Page No. : 4/8
Characteristic Curves(Cont.)
MTDP4953Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C402Q8
Issued Date : 2006.06.15
Revised Date :2009.06.25
Page No. : 5/8
Characteristic Curves(Cont.)
Ordering Information
Device
MTDP4953Q8
MTDP4953Q8
Package
SOP-8
(Pb-free)
Shipping
Marking
3000 pcs / Tape & Reel
4953SS
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C402Q8
Issued Date : 2006.06.15
Revised Date :2009.06.25
Page No. : 6/8
Reel Dimension
Carrier Tape Dimension
MTDP4953Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C402Q8
Issued Date : 2006.06.15
Revised Date :2009.06.25
Page No. : 7/8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
MTDP4953Q8
CYStek Product Specification
Spec. No. : C402Q8
Issued Date : 2006.06.15
Revised Date :2009.06.25
Page No. : 8/8
CYStech Electronics Corp.
SOP-8 Dimension
Right side View
G
Top View
A
I
C
B
Marking:
Device Name
4953SS
Date Code
□□□□
H
J
E
D
K
Front View
Part A
Part A
M
L
8-Lead SOP-8 Plastic Package
CYStek Package Code: Q8
N
O
F
*: Typical
Inches
Min.
Max.
0.1909
0.2007
0.1515
0.1555
0.2283
0.2441
0.0480
0.0519
0.0145
0.0185
0.1472
0.1527
0.0570
0.0649
0.1889
0.2007
DIM
A
B
C
D
E
F
G
H
Millimeters
Min.
Max.
4.85
5.10
3.85
3.95
5.80
6.20
1.22
1.32
0.37
0.47
3.74
3.88
1.45
1.65
4.80
5.10
DIM
I
J
K
L
M
N
O
Inches
Min.
Max.
0.0019
0.0078
0.0118
0.0275
0.0074
0.0098
0.0145
0.0204
0.0118
0.0197
0.0031
0.0051
0.0000
0.0059
Millimeters
Min.
Max.
0.05
0.20
0.30
0.70
0.19
0.25
0.37
0.52
0.30
0.50
0.08
0.13
0.00
0.15
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: Pure tin plated
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
MTDP4953Q8
CYStek Product Specification